Inventor · disambiguated record
Laurent Grenouillet
Also filed as: GRENOUILLET LAURENT
59 granted patents·12 pending applications·138 citations·filing 2008–2024
98Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE47GRENOUILLET LAURENT4IBM4COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES2ST MICROELECTRONICS INC2
Top patents by PatentIndex Score
71 records- 0193US8487340B2Optoelectronic device based on nanowires and corresponding processesGILET PHILIPPE·Filed 2008·Granted Jul 16, 2013·31 cites·14 claims
- 0292US9252208B1Uniaxially-strained FD-SOI finFETST MICROELECTRONICS INC·Filed 2014·Granted Feb 2, 2016·10 cites·20 claims
- 0390US9105691B2Contact isolation scheme for thin buried oxide substrate devicesIBM·Filed 2013·Granted Aug 11, 2015·11 cites·16 claims
- 0489US9831288B2Integrated circuit cointegrating a FET transistor and a RRAM memory pointCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Nov 28, 2017·7 cites·13 claims
- 0586US8969148B2Method for producing a transistor structure with superimposed nanowires and with a surrounding gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 3, 2015·17 cites·10 claims
- 0684US9502558B2Local strain generation in an SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Nov 22, 2016·4 cites·9 claims
- 0784US8890219B2UTBB CMOS imager having a diode junction in a photosensitive area thereofCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Nov 18, 2014·3 cites·8 claims
- 0882US9634103B2CMOS in situ doped flow with independently tunable spacer thicknessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Apr 25, 2017·5 cites·13 claims
- 0982US9601511B2Low leakage dual STI integrated circuit including FDSOI transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 21, 2017·5 cites·14 claims
- 1082US9570465B2Dual STI integrated circuit including FDSOI transistors and method for manufacturing the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 14, 2017·6 cites·15 claims
- 1182US9570340B2Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chlorideCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2013·Granted Feb 14, 2017·5 cites·17 claims
- 1277US10347721B2Method to increase strain in a semiconductor region for forming a channel of the transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 9, 2019·2 cites·17 claims
- 1377US9425051B2Method for producing a silicon-germanium film with variable germanium contentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Aug 23, 2016·3 cites·15 claims
- 1475US10014183B2Method for patterning a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jul 3, 2018·2 cites·17 claims
- 1574US9935019B2Method of fabricating a transistor channel structure with uniaxial strainCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Apr 3, 2018·2 cites·10 claims
- 1672US11189792B2Oxide-based resistive non-volatile memory cell and method for manufacturing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Nov 30, 2021·1 cites·13 claims
- 1771US9601352B2Method of localized annealing of semi-conducting elements using a reflective areaCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Mar 21, 2017·2 cites·11 claims
- 1871US9076732B2Method to prepare semi-conductor device comprising a selective etching of a silicium—germanium layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jul 7, 2015·2 cites·16 claims
- 1970US9236478B2Method for manufacturing a fin MOS transistorST MICROELECTRONICS SA·Filed 2014·Granted Jan 12, 2016·2 cites·25 claims
- 2069US11264479B2Process for producing FET transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 1, 2022·2 cites·21 claims
- 2168US9293474B2Dual channel hybrid semiconductor-on-insulator semiconductor devicesIBM·Filed 2015·Granted Mar 22, 2016·1 cites·14 claims
- 2268US8676002B2Method of producing a photonic device and corresponding photonic deviceGRENOUILLET LAURENT·Filed 2010·Granted Mar 18, 2014·3 cites·10 claims
- 2367US8969966B2Defective P-N junction for backgated fully depleted silicon on insulator MOSFETIBM·Filed 2013·Granted Mar 3, 2015·1 cites·17 claims
- 2466US9337350B2Transistor with reduced parasitic capacitance and access resistance of the source and drain, and method of fabrication of the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted May 10, 2016·2 cites·15 claims
- 2566US9059041B2Dual channel hybrid semiconductor-on-insulator semiconductor devicesIBM·Filed 2013·Granted Jun 16, 2015·1 cites·10 claims
- 2666US2025212414A1Ferroelectric storage device and method for manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 2766US2025212415A1Ferroelectric storage device and method for manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 2865US10347545B2Method for producing on the same transistors substrate having different characteristicsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 9, 2019·1 cites·21 claims
- 2965US9231062B2Method for treating the surface of a silicon substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jan 5, 2016·1 cites·20 claims
- 3064US9911820B2Method for fabrication of a field-effect with reduced stray capacitanceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 6, 2018·1 cites·14 claims
- 3164US9711567B2Process for fabricating an integrated circuit cointegrating a FET transistor and an OxRAM memory locationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jul 18, 2017·1 cites·14 claims
- 3263US12094722B2Method for increasing the surface roughness of a metal layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Sep 17, 2024·0 cites·16 claims
- 3363US8472493B2Hybrid laser coupled to a waveguideDUPONT TIPHAINE·Filed 2010·Granted Jun 25, 2013·2 cites·5 claims
- 3462US2025203875A1Method for preparing an anti-ferroelectric multilayer deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 3561US12215430B2Method for increasing the surface roughness of a metal layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Feb 4, 2025·0 cites·11 claims
- 3661US8987854B2Microelectronic device with isolation trenches extending under an active areaCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 24, 2015·1 cites·13 claims
- 3761US2025203876A1Method for preparing a ferroelectric multilayer deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 3859US8722499B2Method for fabricating a field effect device with weak junction capacitanceVINET MAUD·Filed 2012·Granted May 13, 2014·1 cites·5 claims
- 3959US2025159901A1Electronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 4058US12033696B2Memory circuit comprising a plurality of 1T1R memory cellsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jul 9, 2024·0 cites·10 claims
- 4157US2025212704A1Ferroelectric storage device and method for manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 4256US12363918B2Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jul 15, 2025·0 cites·11 claims
- 4355US11887662B2Matrix of elementary switches forming a message, associated reading and writing methodsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jan 30, 2024·0 cites·13 claims
- 4454US2025204282A1Non-volatile memory structure with stack in via location and conductive line on this viaCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 4553US9373507B2Defective P-N junction for backgated fully depleted silicon on insulator mosfetGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 21, 2016·0 cites·9 claims
- 4653US2023176816A1Computer for executing algorithms carried out from memories using mixed technologiesCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2022·Application pending·0 cites
- 4752US9466664B2Uniaxially-strained FD-SOI finFETST MICROELECTRONICS INC·Filed 2015·Granted Oct 11, 2016·0 cites·21 claims
- 4850US12437792B2Data logic processing circuit integrated in a data storage circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Granted Oct 7, 2025·0 cites·15 claims
- 4950US10985317B2Device for selecting a memory cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Apr 20, 2021·0 cites·13 claims
- 5050US9673329B2Method for manufacturing a fin MOS transistorST MICROELECTRONICS SA·Filed 2015·Granted Jun 6, 2017·0 cites·12 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →