P

Inventor

PEY KIN LEONG

SG39 patents
⚠️ This page may combine multiple inventors who share the name “PEY KIN LEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHARTERED SEMICONDUCTOR MFG

31 patents
US6475908B1Nov 5, 2002

Dual metal gate process: metals and their silicides

CHARTERED SEMICONDUCTOR MFG128 citations99
US5731239AMar 24, 1998

Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance

CHARTERED SEMICONDUCTOR MFG174 citations99
US6458695B1Oct 1, 2002

Methods to form dual metal gates by incorporating metals and their conductive oxides

CHARTERED SEMICONDUCTOR MFG83 citations98
US6153485ANov 28, 2000

Salicide formation on narrow poly lines by pulling back of spacer

CHARTERED SEMICONDUCTOR MFG108 citations98
US6025267AFeb 15, 2000

Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices

CHARTERED SEMICONDUCTOR MFG140 citations98
US6750519B2Jun 15, 2004

Dual metal gate process: metals and their silicides

CHARTERED SEMICONDUCTOR MFG45 citations96
US6391731B1May 21, 2002

Activating source and drain junctions and extensions using a single laser anneal

CHARTERED SEMICONDUCTOR MFG59 citations96
US6365446B1Apr 2, 2002

Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process

CHARTERED SEMICONDUCTOR MFG55 citations96
US7005716B2Feb 28, 2006

Dual metal gate process: metals and their silicides

CHARTERED SEMICONDUCTOR MFG25 citations93
US6677652B2Jan 13, 2004

Methods to form dual metal gates by incorporating metals and their conductive oxides

CHARTERED SEMICONDUCTOR MFG24 citations93
US6624489B2Sep 23, 2003

Formation of silicided shallow junctions using implant through metal technology and laser annealing process

CHARTERED SEMICONDUCTOR MFG25 citations92
US6534390B1Mar 18, 2003

Salicide method for producing a semiconductor device using silicon/amorphous silicon/metal structure

CHARTERED SEMICONDUCTOR MFG21 citations92
US6534388B1Mar 18, 2003

Method to reduce variation in LDD series resistance

CHARTERED SEMICONDUCTOR MFG37 citations92
US6387784B1May 14, 2002

Method to reduce polysilicon depletion in MOS transistors

CHARTERED SEMICONDUCTOR MFG22 citations92
US6271133B1Aug 7, 2001

Optimized Co/Ti-salicide scheme for shallow junction deep sub-micron device fabrication

CHARTERED SEMICONDUCTOR MFG36 citations92
US6180501B1Jan 30, 2001

Method to fabricate a double-polysilicon gate structure for a sub-quarter micron self-aligned-titanium silicide process

CHARTERED SEMICONDUCTOR MFG44 citations92
US5956137ASep 21, 1999

In-line process monitoring using micro-raman spectroscopy

CHARTERED SEMICONDUCTOR MFG31 citations92
US6335253B1Jan 1, 2002

Method to form MOS transistors with shallow junctions using laser annealing

CHARTERED SEMICONDUCTOR MFG49 citations91
US6010954AJan 4, 2000

Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices

CHARTERED SEMICONDUCTOR MFG41 citations91
US6410429B1Jun 25, 2002

Method for fabricating void-free epitaxial-CoSi2 with ultra-shallow junctions

CHARTERED SEMICONDUCTOR MFG33 citations90
US6093628AJul 25, 2000

Ultra-low sheet resistance metal/poly-si gate for deep sub-micron CMOS application

CHARTERED SEMICONDUCTOR MFG41 citations90
US6566650B1May 20, 2003

Incorporation of dielectric layer onto SThM tips for direct thermal analysis

CHARTERED SEMICONDUCTOR MFG25 citations89
US7253097B2Aug 7, 2007

Integrated circuit system using dual damascene process

CHARTERED SEMICONDUCTOR MFG11 citations84
US6891233B2May 10, 2005

Methods to form dual metal gates by incorporating metals and their conductive oxides

CHARTERED SEMICONDUCTOR MFG15 citations84
US6524910B1Feb 25, 2003

Method of forming dual thickness gate dielectric structures via use of silicon nitride layers

CHARTERED SEMICONDUCTOR MFG13 citations84
US6339021B1Jan 15, 2002

Methods for effective nickel silicide formation

CHARTERED SEMICONDUCTOR MFG19 citations83
US7030451B2Apr 18, 2006

Method and apparatus for performing nickel salicidation

CHARTERED SEMICONDUCTOR MFG5 citations74
US6890854B2May 10, 2005

Method and apparatus for performing nickel salicidation

CHARTERED SEMICONDUCTOR MFG11 citations74
US6835989B2Dec 28, 2004

Methods to form dual metal gates by incorporating metals and their conductive oxides

CHARTERED SEMICONDUCTOR MFG9 citations74
US6110811AAug 29, 2000

Selective CVD TiSi2 deposition with TiSi2 liner

CHARTERED SEMICONDUCTOR MFG8 citations74
US6316811B1Nov 13, 2001

Selective CVD TiSi2 deposition with TiSi2 liner

CHARTERED SEMICONDUCTOR MFG5 citations63

GLOBALFOUNDRIES SG PTE LTD

3 patents

TAN DEXTER XUEMING

2 patents

TAN DEXTER

1 patent

UNIV NANYANG TECH

1 patent

LIM YEOW KHENG

1 patent