Inventor
PEY KIN LEONG
SG39 patents
⚠️ This page may combine multiple inventors who share the name “PEY KIN LEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
31 patentsUS6475908B1Nov 5, 2002
Dual metal gate process: metals and their silicides
CHARTERED SEMICONDUCTOR MFG128 citations99
US5731239AMar 24, 1998
Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
CHARTERED SEMICONDUCTOR MFG174 citations99
US6458695B1Oct 1, 2002
Methods to form dual metal gates by incorporating metals and their conductive oxides
CHARTERED SEMICONDUCTOR MFG83 citations98
US6153485ANov 28, 2000
Salicide formation on narrow poly lines by pulling back of spacer
CHARTERED SEMICONDUCTOR MFG108 citations98
US6025267AFeb 15, 2000
Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices
CHARTERED SEMICONDUCTOR MFG140 citations98
US6750519B2Jun 15, 2004
Dual metal gate process: metals and their silicides
CHARTERED SEMICONDUCTOR MFG45 citations96
US6391731B1May 21, 2002
Activating source and drain junctions and extensions using a single laser anneal
CHARTERED SEMICONDUCTOR MFG59 citations96
US6365446B1Apr 2, 2002
Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process
CHARTERED SEMICONDUCTOR MFG55 citations96
US7005716B2Feb 28, 2006
Dual metal gate process: metals and their silicides
CHARTERED SEMICONDUCTOR MFG25 citations93
US6677652B2Jan 13, 2004
Methods to form dual metal gates by incorporating metals and their conductive oxides
CHARTERED SEMICONDUCTOR MFG24 citations93
US6624489B2Sep 23, 2003
Formation of silicided shallow junctions using implant through metal technology and laser annealing process
CHARTERED SEMICONDUCTOR MFG25 citations92
US6534390B1Mar 18, 2003
Salicide method for producing a semiconductor device using silicon/amorphous silicon/metal structure
CHARTERED SEMICONDUCTOR MFG21 citations92
US6534388B1Mar 18, 2003
Method to reduce variation in LDD series resistance
CHARTERED SEMICONDUCTOR MFG37 citations92
US6387784B1May 14, 2002
Method to reduce polysilicon depletion in MOS transistors
CHARTERED SEMICONDUCTOR MFG22 citations92
US6271133B1Aug 7, 2001
Optimized Co/Ti-salicide scheme for shallow junction deep sub-micron device fabrication
CHARTERED SEMICONDUCTOR MFG36 citations92
US6180501B1Jan 30, 2001
Method to fabricate a double-polysilicon gate structure for a sub-quarter micron self-aligned-titanium silicide process
CHARTERED SEMICONDUCTOR MFG44 citations92
US5956137ASep 21, 1999
In-line process monitoring using micro-raman spectroscopy
CHARTERED SEMICONDUCTOR MFG31 citations92
US6335253B1Jan 1, 2002
Method to form MOS transistors with shallow junctions using laser annealing
CHARTERED SEMICONDUCTOR MFG49 citations91
US6010954AJan 4, 2000
Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices
CHARTERED SEMICONDUCTOR MFG41 citations91
US6410429B1Jun 25, 2002
Method for fabricating void-free epitaxial-CoSi2 with ultra-shallow junctions
CHARTERED SEMICONDUCTOR MFG33 citations90
US6093628AJul 25, 2000
Ultra-low sheet resistance metal/poly-si gate for deep sub-micron CMOS application
CHARTERED SEMICONDUCTOR MFG41 citations90
US6566650B1May 20, 2003
Incorporation of dielectric layer onto SThM tips for direct thermal analysis
CHARTERED SEMICONDUCTOR MFG25 citations89
US7253097B2Aug 7, 2007
Integrated circuit system using dual damascene process
CHARTERED SEMICONDUCTOR MFG11 citations84
US6891233B2May 10, 2005
Methods to form dual metal gates by incorporating metals and their conductive oxides
CHARTERED SEMICONDUCTOR MFG15 citations84
US6524910B1Feb 25, 2003
Method of forming dual thickness gate dielectric structures via use of silicon nitride layers
CHARTERED SEMICONDUCTOR MFG13 citations84
US6339021B1Jan 15, 2002
Methods for effective nickel silicide formation
CHARTERED SEMICONDUCTOR MFG19 citations83
US7030451B2Apr 18, 2006
Method and apparatus for performing nickel salicidation
CHARTERED SEMICONDUCTOR MFG5 citations74
US6890854B2May 10, 2005
Method and apparatus for performing nickel salicidation
CHARTERED SEMICONDUCTOR MFG11 citations74
US6835989B2Dec 28, 2004
Methods to form dual metal gates by incorporating metals and their conductive oxides
CHARTERED SEMICONDUCTOR MFG9 citations74
US6110811AAug 29, 2000
Selective CVD TiSi2 deposition with TiSi2 liner
CHARTERED SEMICONDUCTOR MFG8 citations74
US6316811B1Nov 13, 2001
Selective CVD TiSi2 deposition with TiSi2 liner
CHARTERED SEMICONDUCTOR MFG5 citations63
GLOBALFOUNDRIES SG PTE LTD
3 patentsUS10381360B1Aug 13, 2019
Control gate dummy for word line uniformity and method for producing the same
GLOBALFOUNDRIES SG PTE LTD3 citations68
US7892905B2Feb 22, 2011
Formation of strained Si channel and Si1-xGex source/drain structures using laser annealing
GLOBALFOUNDRIES SG PTE LTD2 citations60
US9024286B2May 5, 2015
RRAM cell with bottom electrode(s) positioned in a semiconductor substrate
GLOBALFOUNDRIES SG PTE LTD1 citations44