P

Inventor

TZENG KUO-HWA

TW23 patents
⚠️ This page may combine multiple inventors who share the name “TZENG KUO-HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

14 patents
US10468486B2Nov 5, 2019

SOI substrate, semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9281331B2Mar 8, 2016

High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US11855159B2Dec 26, 2023

Method for forming thin semiconductor-on-insulator (SOI) substrates

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10658474B2May 19, 2020

Method for forming thin semiconductor-on-insulator (SOI) substrates

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11087971B2Aug 10, 2021

Method for manufacturing semiconductor device and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10504716B2Dec 10, 2019

Method for manufacturing semiconductor device and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11264469B2Mar 1, 2022

Method for forming thin semiconductor-on-insulator (SOI) substrates

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237165B2Feb 25, 2025

Method for wafer bonding including edge trimming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211877B2Jan 28, 2025

Back-side deep trench isolation structure for image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11955496B2Apr 9, 2024

Back-side deep trench isolation structure for image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11164945B2Nov 2, 2021

SOI substrate, semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10204822B2Feb 12, 2019

Method for forming trench liner passivation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9917003B2Mar 13, 2018

Trench liner passivation for dark current improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11063117B2Jul 13, 2021

Semiconductor device structure having carrier-trapping layers with different grain sizes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

CHEN NENG-KUO

6 patents

TAIWAN SEMICONDUCTOR MFG

2 patents

ADVANCED SEMICONDUCTOR ENG

1 patent