Inventor
CHUNG HWI-TAEK
KR19 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HWI-TAEK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS6587375B2Jul 1, 2003
Row decoder for a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD57 citations96
US7606099B2Oct 20, 2009
Semiconductor memory device controlling output voltage level of high voltage generator according to temperature variation
SAMSUNG ELECTRONICS CO LTD23 citations92
US6614292B1Sep 2, 2003
Boosting circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD34 citations92
US6154389ANov 28, 2000
Semiconductor memory device with a column redundancy occupying a less chip area
SAMSUNG ELECTRONICS CO LTD37 citations92
US6128231AOct 3, 2000
Nonvolatile semiconductor memory device capable of optimizing program time
SAMSUNG ELECTRONICS CO LTD32 citations92
US6122194ASep 19, 2000
Semiconductor memory device with a column redundancy occupying a less chip area
SAMSUNG ELECTRONICS CO LTD22 citations92
US6031774AFeb 29, 2000
Internal power supply voltage generating ciruit and the method for controlling thereof
SAMSUNG ELECTRONICS CO LTD27 citations92
US5982224ANov 9, 1999
Low-power charge pump circuit having reduced body effect
SAMSUNG ELECTRONICS CO LTD26 citations89
US6044020AMar 28, 2000
Nonvolatile semiconductor memory device with a row decoder circuit
SAMSUNG ELECTRONICS CO LTD35 citations86
US6940758B2Sep 6, 2005
Flash memory device with stable source line regardless of bit line coupling and loading effect
SAMSUNG ELECTRONICS CO LTD16 citations84
US6166957ADec 26, 2000
Nonvolatile semiconductor memory device with a level shifter circuit
SAMSUNG ELECTRONICS CO LTD17 citations84
US10409414B2Sep 10, 2019
Touch sensing apparatus, touch sensing method, touch sensing system, and display system using the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US6101126AAug 8, 2000
Nonvolatile semiconductor memory device with a level shifter circuit
SAMSUNG ELECTRONICS CO LTD14 citations74
US6301177B1Oct 9, 2001
Internal power supply voltage generating circuit and the method for controlling thereof
SAMSUNG ELECTRONICS CO LTD8 citations73
US7035162B2Apr 25, 2006
Memory devices including global row decoders and operating methods thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US10540041B2Jan 21, 2020
Touch processor, touch display driver integrated circuit chip including touch processor, and method of operating touch processor
SAMSUNG ELECTRONICS CO LTD1 citations62
US7298190B2Nov 20, 2007
Phase locked loop having enhanced locking characteristics
SAMSUNG ELECTRONICS CO LTD0 citations52