Inventor
COTNER RAYMOND E
US6 patents
Patents
6 patentsUS5714413AFeb 3, 1998
Method of making a transistor having a deposited dual-layer spacer structure
INTEL CORP117 citations97
US6046494AApr 4, 2000
High tensile nitride layer
INTEL CORP62 citations95
US5633202AMay 27, 1997
High tensile nitride layer
INTEL CORP65 citations95
US11276760B2Mar 15, 2022
Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same
INTEL CORP2 citations72
US6720631B2Apr 13, 2004
Transistor having a deposited dual-layer spacer structure
INTEL CORP7 citations72
US10355093B2Jul 16, 2019
Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same
INTEL CORP0 citations51