Inventor
HU SI PING
CN27 patents
Patents
27 patentsUS10580788B2Mar 3, 2020
Methods for forming three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD14 citations85
US11289422B2Mar 29, 2022
Bonding alignment marks at bonding in interface
YANGTZE MEMORY TECH CO LTD6 citations84
US10763158B2Sep 1, 2020
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD6 citations84
US10679941B2Jun 9, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD6 citations84
US10748851B1Aug 18, 2020
Hybrid bonding using dummy bonding contacts and dummy interconnects
YANGTZE MEMORY TECH CO LTD6 citations83
US10680003B2Jun 9, 2020
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD7 citations83
US11322392B2May 3, 2022
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD2 citations73
US11276642B2Mar 15, 2022
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD2 citations73
US11462503B2Oct 4, 2022
Hybrid bonding using dummy bonding contacts
YANGTZE MEMORY TECH CO LTD2 citations72
US11205619B2Dec 21, 2021
Hybrid bonding using dummy bonding contacts and dummy interconnects
YANGTZE MEMORY TECH CO LTD2 citations72
US11145666B2Oct 12, 2021
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US11049834B2Jun 29, 2021
Hybrid bonding using dummy bonding contacts
YANGTZE MEMORY TECH CO LTD3 citations72
US11177231B2Nov 16, 2021
Bonding contacts having capping layer and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations71
US12137558B2Nov 5, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12010838B2Jun 11, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11996322B2May 28, 2024
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD0 citations62
US11791265B2Oct 17, 2023
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11670543B2Jun 6, 2023
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD0 citations62
US11101276B2Aug 24, 2021
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11056387B2Jul 6, 2021
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US10796993B2Oct 6, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD1 citations62
US12588495B2Mar 24, 2026
Bonding alignment marks at bonding interface
YANGTZE MEMORY TECH CO LTD0 citations61
US11876049B2Jan 16, 2024
Bonding alignment marks at bonding interface
YANGTZE MEMORY TECH CO LTD0 citations61
US11715718B2Aug 1, 2023
Bonding contacts having capping layer and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US10651087B2May 12, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US10607887B2Mar 31, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations52