Inventor
ZHU JIFENG
CN45 patents
⚠️ This page may combine multiple inventors who share the name “ZHU JIFENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
41 patentsUS10283452B2May 7, 2019
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD61 citations98
US11133325B2Sep 28, 2021
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations93
US10580788B2Mar 3, 2020
Methods for forming three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD14 citations85
US11211397B2Dec 28, 2021
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD6 citations84
US11031333B2Jun 8, 2021
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD8 citations84
US10867678B2Dec 15, 2020
Three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD8 citations84
US10763158B2Sep 1, 2020
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD6 citations84
US10679941B2Jun 9, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD6 citations84
US10748851B1Aug 18, 2020
Hybrid bonding using dummy bonding contacts and dummy interconnects
YANGTZE MEMORY TECH CO LTD6 citations83
US10680003B2Jun 9, 2020
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10672711B2Jun 2, 2020
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD7 citations83
US11322392B2May 3, 2022
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD2 citations73
US11276642B2Mar 15, 2022
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD2 citations73
US10784225B2Sep 22, 2020
Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US11991880B2May 21, 2024
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD2 citations72
US11462503B2Oct 4, 2022
Hybrid bonding using dummy bonding contacts
YANGTZE MEMORY TECH CO LTD2 citations72
US11205619B2Dec 21, 2021
Hybrid bonding using dummy bonding contacts and dummy interconnects
YANGTZE MEMORY TECH CO LTD2 citations72
US11145666B2Oct 12, 2021
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US11049834B2Jun 29, 2021
Hybrid bonding using dummy bonding contacts
YANGTZE MEMORY TECH CO LTD3 citations72
US10847528B2Nov 24, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10840125B2Nov 17, 2020
Memory structure and method for forming the same
YANGTZE MEMORY TECH CO LTD6 citations72
US10644015B2May 5, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US10515975B1Dec 24, 2019
Method for forming dual-deck channel hole structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations72
US10497708B1Dec 3, 2019
Memory structure and forming method thereof
YANGTZE MEMORY TECH CO LTD4 citations71
US12137558B2Nov 5, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12063780B2Aug 13, 2024
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12010838B2Jun 11, 2024
Staircase structure for memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11996322B2May 28, 2024
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD0 citations62
US11805646B2Oct 31, 2023
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11791265B2Oct 17, 2023
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11699657B2Jul 11, 2023
Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer
YANGTZE MEMORY TECH CO LTD0 citations62
US11670543B2Jun 6, 2023
Method for forming lead wires in hybrid-bonded semiconductor devices
YANGTZE MEMORY TECH CO LTD0 citations62
US11462474B2Oct 4, 2022
Three-dimensional memory devices having a plurality of NAND strings
YANGTZE MEMORY TECH CO LTD0 citations62
US11430756B2Aug 30, 2022
Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11101276B2Aug 24, 2021
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11056387B2Jul 6, 2021
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US10796993B2Oct 6, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD1 citations62
US10651087B2May 12, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US10607887B2Mar 31, 2020
Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US12490440B2Dec 2, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations51
US10804287B2Oct 13, 2020
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations51
WUHAN XINXIN SEMICONDUCTOR MFG
3 patentsUS9455297B2Sep 27, 2016
Preparation process of image sensors
WUHAN XINXIN SEMICONDUCTOR MFG0 citations41
US9589937B2Mar 7, 2017
Semiconductor cooling method and method of heat dissipation
WUHAN XINXIN SEMICONDUCTOR MFG0 citations37
US9455221B2Sep 27, 2016
Preparation method of three-dimensional integrated inductor-capacitor structure
WUHAN XINXIN SEMICONDUCTOR MFG0 citations28