Inventor

SZE JHY-JYI

TW130 patents

⚠️ This page may combine multiple inventors who share the name “SZE JHY-JYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SZE JHY-JYI

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor devices having reduced noise

Semiconductor devices for image sensing

Extra doped region for back-side deep trench isolation

Image sensor including silicon over germanium layer

Image sensor comprising reflective guide layer and method of forming the same

SPAD image sensor and associated fabricating method

Semiconductor image sensor

Semiconductor image sensor

Extra doped region for back-side deep trench isolation

Image sensor comprising reflective guide layer and method of forming the same

Implant damage free image sensor and method of the same

Extra doped region for back-side deep trench isolation

High performance image sensor

Composite BSI structure and method of manufacturing the same

Device over photodetector pixel sensor

Semiconductor image sensor

Vertical gate field effect transistor

SPAD image sensor and associated fabricating method

Composite bsi structure and method of manufacturing the same

Semiconductor image sensor

Metal reflector grounding for noise reduction in light detector

Device over photodetector pixel sensor

Semiconductor image sensor

Semiconductor imaging device having improved dark current performance

Pixel device on deep trench isolation (DTI) structure for image sensor

Implant damage free image sensor and method of the same

Semiconductor image sensor

Extra doped region for back-side deep trench isolation

CMOS image sensor and method for forming the same

Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture

Pixel unit cell having conversion circuit

Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture

Mechanisms for forming image sensor device

Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof

High performance image sensor

High density image sensor

Semiconductor image sensor and method for forming the same

Device over photodetector pixel sensor

Low-noise image sensor having stacked semiconductor substrates

Extra doped region for back-side deep trench isolation

Semiconductor imaging device having improved dark current performance

Image sensor including silicon over germanium layer

UNITED MICROELECTRONICS CORP

Image sensor

Image sensor and method of manufacturing the same

Photo diode and related method for fabrication

TAIWAN SEMICONDUCTOR MFG

Hybrid bonding and apparatus for performing the same

Image sensor configured to reduce blooming during idle period

UNITED SEMICONDUCTOR CORP

Method for manufacturing MOS transistor

Method for fabricating a transistor

UNITED SEMICONDUCTOR CIRCUIT C

Method of forming capacitors