Inventor
CHIU YA-WEN
TW16 patents
Patents
16 patentsUS11901442B2Feb 13, 2024
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10804161B2Oct 13, 2020
CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12518976B2Jan 6, 2026
Nitride-containing STI liner for SIGE channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046479B2Jul 23, 2024
Nitride-containing STI liner for SiGe channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12197131B2Jan 14, 2025
Method for reducing line-end space in integrated circuit patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11677015B2Jun 13, 2023
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11635695B2Apr 25, 2023
Method for reducing line-end space in integrated circuit patterning
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12308369B2May 20, 2025
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11961768B2Apr 16, 2024
CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11682589B2Jun 20, 2023
CMOS finFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12183573B2Dec 31, 2024
Device and method for high pressure anneal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11854800B2Dec 26, 2023
Device and method for high pressure anneal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11037781B2Jun 15, 2021
Device and method for high pressure anneal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12581721B2Mar 17, 2026
Method for gap filling with selectively formed seed layer and heteroepitaxial cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12288715B2Apr 29, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11631612B2Apr 18, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47