P

Inventor

LEE DA-YUAN

TW117 patents
⚠️ This page may combine multiple inventors who share the name “LEE DA-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

39 patents
US10304835B1May 28, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD33 citations97
US11289578B2Mar 29, 2022

Selective etching to increase threshold voltage spread

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US11171134B2Nov 9, 2021

Techniques providing metal gate devices with multiple barrier layers

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10283619B2May 7, 2019

Metal gate scheme for device and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9978601B2May 22, 2018

Methods for pre-deposition treatment of a work-function metal layer

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9972694B2May 15, 2018

Atomic layer deposition methods and structures thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9941373B2Apr 10, 2018

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9871114B2Jan 16, 2018

Metal gate scheme for device and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9837507B1Dec 5, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9799745B2Oct 24, 2017

Atomic layer deposition methods and structures thereof

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9590065B2Mar 7, 2017

Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9449832B2Sep 20, 2016

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9431505B2Aug 30, 2016

Method of making a gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11430652B2Aug 30, 2022

Controlling threshold voltages through blocking layers

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10504789B1Dec 10, 2019

Pre-deposition treatment for FET technology and devices formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10297453B2May 21, 2019

Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US9947540B2Apr 17, 2018

Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations83
US12255104B2Mar 18, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11742395B2Aug 29, 2023

Selective etching to increase threshold voltage spread

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11923240B2Mar 5, 2024

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502080B2Nov 15, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11443979B2Sep 13, 2022

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11289480B2Mar 29, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11121041B2Sep 14, 2021

Methods for threshold voltage tuning and structure formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11075124B2Jul 27, 2021

Semiconductor device with profiled work-function metal gate electrode and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10923576B2Feb 16, 2021

Atomic layer deposition methods and structures thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868013B2Dec 15, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10847637B2Nov 24, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10756087B2Aug 25, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10741400B2Aug 11, 2020

Gate replacement structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10699966B2Jun 30, 2020

Semiconductor device with profiled work-function metal gate electrode and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10692770B2Jun 23, 2020

Geometry for threshold voltage tuning on semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10651283B2May 12, 2020

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10510621B2Dec 17, 2019

Methods for threshold voltage tuning and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10510756B1Dec 17, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10157998B2Dec 18, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10128237B2Nov 13, 2018

Methods of gate replacement in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9831243B2Nov 28, 2017

Techniques providing metal gate devices with multiple barrier layers

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9761683B2Sep 12, 2017

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73

TAIWAN SEMICONDUCTOR MFG

4 patents

LEE DA-YUAN

4 patents

LIM PENG-SOON

1 patent

Yu xiong-fei

1 patent

HSU KUANG-YUAN

1 patent

Showing the top 50 of 117 patents by PatentIndex Score.