Inventor
LEE HSIEN-MING
TW71 patents
⚠️ This page may combine multiple inventors who share the name “LEE HSIEN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS10535523B1Jan 14, 2020
Formation and in-situ etching processes for metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations93
US9590065B2Mar 7, 2017
Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11024505B2Jun 1, 2021
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10854459B2Dec 1, 2020
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US11282938B2Mar 22, 2022
Capping layers in metal gates of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations80
US12255104B2Mar 18, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11532509B2Dec 20, 2022
Selective hybrid capping layer for metal gates of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11302818B2Apr 12, 2022
Gate resistance reduction through low-resistivity conductive layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11075124B2Jul 27, 2021
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10699966B2Jun 30, 2020
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11545363B2Jan 3, 2023
Formation and in-situ etching processes for metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10644153B2May 5, 2020
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9679984B2Jun 13, 2017
Metal gate structure with multi-layer composition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11710638B2Jul 25, 2023
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11610982B2Mar 21, 2023
Void elimination for gap-filling in high-aspect ratio trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10804161B2Oct 13, 2020
CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12237228B2Feb 25, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183629B2Dec 31, 2024
Selective hybrid capping layer for metal gates of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176251B2Dec 24, 2024
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170202B2Dec 17, 2024
Formation and in-situ etching processes for metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142530B2Nov 12, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12040235B2Jul 16, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11916146B2Feb 27, 2024
Gate resistance reduction through low-resistivity conductive layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11804409B2Oct 31, 2023
Semiconductor device with profiled work-function metal gate electrode and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735481B2Aug 22, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11437280B2Sep 6, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081396B2Aug 3, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056395B2Jul 6, 2021
Transistor metal gate and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998414B2May 4, 2021
Metal gate structure with multi-layer composition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12354876B2Jul 8, 2025
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12294022B2May 6, 2025
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12087767B2Sep 10, 2024
Method of tuning threshold voltages of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11721740B2Aug 8, 2023
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11538805B2Dec 27, 2022
Method of tuning threshold voltages of transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11171235B2Nov 9, 2021
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11088257B2Aug 10, 2021
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12100751B2Sep 24, 2024
Void elimination for gap-filling in high-aspect ratio trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11961768B2Apr 16, 2024
CMOS FinFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
TAIWAN SEMICONDUCTOR MFG
8 patentsUS7193327B2Mar 20, 2007
Barrier structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG43 citations93
US7101790B2Sep 5, 2006
Method of forming a robust copper interconnect by dilute metal doping
TAIWAN SEMICONDUCTOR MFG12 citations84
US9064857B2Jun 23, 2015
N metal for FinFET
TAIWAN SEMICONDUCTOR MFG6 citations83
US7253501B2Aug 7, 2007
High performance metallization cap layer
TAIWAN SEMICONDUCTOR MFG9 citations74
US7030023B2Apr 18, 2006
Method for simultaneous degas and baking in copper damascene process
TAIWAN SEMICONDUCTOR MFG7 citations74
US6876082B2Apr 5, 2005
Refractory metal nitride barrier layer with gradient nitrogen concentration
TAIWAN SEMICONDUCTOR MFG10 citations70
US9293334B2Mar 22, 2016
N metal for FinFET and methods of forming
TAIWAN SEMICONDUCTOR MFG2 citations62
US7453149B2Nov 18, 2008
Composite barrier layer
TAIWAN SEMICONDUCTOR MFG2 citations61
ABILITY ENTPR CO LTD
2 patentsLIN YU-FANG
1 patentACADEMIA SINICA
1 patentShowing the top 50 of 71 patents by PatentIndex Score.