Inventor

SHEPPARD SCOTT

US67 patents

⚠️ This page may combine multiple inventors who share the name “SHEPPARD SCOTT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHEPPARD SCOTT

CREE INC

Switch mode power amplifier using MIS-HEMT with field plate extension

Methods of fabricating nitride-based transistors with a cap layer and a recessed gate

Switch mode power amplifier using mis-HEMT with field plate extension

Methods of fabricating nitride-based transistors with a cap layer and a recessed gate

Transistors having buried n-type and p-type regions beneath the source region

Method of forming vias in silicon carbide and resulting devices and circuits

Recessed field plate transistor structures

Transistor with bypassed gate structure field

High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability

Methods of fabricating high voltage, high temperature capacitor and interconnection structures

High voltage, high temperature capacitor and interconnection structures

Cascode structures for GaN HEMTs

Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors

Methods of forming semiconductor contacts

Stepped field plates with proximity to conduction channel and related fabrication methods

High electron mobility transistors having improved drain current drift and/or leakage current performance

High electron mobility transistors having improved drain current drift and/or leakage current performance

High electron mobility transistors having improved contact spacing and/or improved contact vias

Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors

Packaging for RF transistor amplifiers

Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys

Packaged electronic circuits having moisture protection encapsulation and methods of forming same

Multilayer encapsulation for humidity robustness and related fabrication methods

Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors

WOLFSPEED INC

Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance

Structures for reducing electron concentration and process for reducing electron concentration

Field effect transistor with source-connected field plate

Field effect transistor with enhanced reliability

Multi-zone radio frequency transistor amplifiers

Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys

Field effect transistors with modified access regions

Packaged electronic circuits having moisture protection encapsulation and methods of forming same

Radio frequency transistor amplifiers having engineered intrinsic capacitances for improved performance

Field effect transistor with at least partially recessed field plate

RF amplifiers having shielded transmission line structures

Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance

Field reducing structures for nitrogen-polar group III-nitride semiconductor devices

High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability

SHEPPARD SCOTT

Traffic analysis for a lawful interception system

Nitride-based transistors with a cap layer and a recessed gate

Methods, systems and computer program products for importing data from an edge router to a network management system

MACOM TECH SOLUTIONS HOLDINGS INC

RF amplifiers having shielded transmission line structures

RF amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections

Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity

AT & T IP I LP

Verifying a lawful interception system

Methods, systems and computer program products for integrating network traffic

HAGLEITNER HELMUT

Methods of forming contact structures including alternating metal and silicon layers and related devices

SAXLER ADAM WILLIAM

Method of fabricating seminconductor devices including self aligned refractory contacts

WU YIFENG

Wide bandgap transistors with gate-source field plates