Inventor
NA HOON-JOO
KR39 patents
⚠️ This page may combine multiple inventors who share the name “NA HOON-JOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
27 patentsUS7972950B2Jul 5, 2011
Method of fabricating semiconductor device having dual gate
SAMSUNG ELECTRONICS CO LTD8 citations84
US10312340B2Jun 4, 2019
Semiconductor devices having work function metal films and tuning materials
SAMSUNG ELECTRONICS CO LTD6 citations83
US9806075B2Oct 31, 2017
Integrated circuit devices having a Fin-type active region and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US9543300B2Jan 10, 2017
CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9252058B2Feb 2, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10600913B2Mar 24, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US10593670B2Mar 17, 2020
Methods of manufacturing integrated circuit devices having a fin-type active region
SAMSUNG ELECTRONICS CO LTD3 citations72
US10906283B2Feb 2, 2021
Wafer bonding apparatus for directly bonding wafers and a wafer bonding system having the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US10847515B2Nov 24, 2020
Semiconductor devices with nanowires and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10756195B2Aug 25, 2020
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10340358B2Jul 2, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US10177149B2Jan 8, 2019
Semiconductor devices with nanowires and with metal layers having different grain sizes
SAMSUNG ELECTRONICS CO LTD2 citations71
US9236313B2Jan 12, 2016
Method of fabricating semiconductor device having dual gate
SAMSUNG ELECTRONICS CO LTD1 citations63
US11967595B2Apr 23, 2024
Semiconductor devices with nanowires and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11283235B2Mar 22, 2022
Semiconductor laser device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11588039B2Feb 21, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11495597B2Nov 8, 2022
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11417536B2Aug 16, 2022
Method for wafer planarization and an image sensor made by the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11133277B2Sep 28, 2021
Semiconductor device bonded by bonding pads
SAMSUNG ELECTRONICS CO LTD0 citations52
US12148784B2Nov 19, 2024
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations51
US11728200B2Aug 15, 2023
Wafer bonding apparatuses
SAMSUNG ELECTRONICS CO LTD0 citations50
US11177364B2Nov 16, 2021
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10872888B2Dec 22, 2020
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10529816B2Jan 7, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US10361194B2Jul 23, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12402430B2Aug 26, 2025
Image sensor
SAMSUNG ELECTRONICS CO LTD0 citations47
US9929252B2Mar 27, 2018
Method of forming thin film and method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations46
NA HOON-JOO
3 patentsUS8748251B2Jun 10, 2014
Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices
NA HOON-JOO10 citations82
US8293599B2Oct 23, 2012
Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials
NA HOON-JOO12 citations82
US8932922B2Jan 13, 2015
Method of fabricating semiconductor device having dual gate
NA HOON-JOO0 citations51