Inventor
FOMPEYRINE JEAN
CH50 patents
⚠️ This page may combine multiple inventors who share the name “FOMPEYRINE JEAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
47 patentsUS9891112B1Feb 13, 2018
Radiation detector
IBM36 citations93
US9129863B2Sep 8, 2015
Method to form dual channel group III-V and Si/Ge FINFET CMOS
IBM18 citations92
US11009727B2May 18, 2021
Integrated waveguide structure with pockels layer having a selected crystal orientation
IBM12 citations83
US10312441B1Jun 4, 2019
Tunable resistive element
IBM8 citations83
US9864134B2Jan 9, 2018
Semiconductor structure and method for manufacturing a semiconductor structure
IBM9 citations83
US7122254B2Oct 17, 2006
Inorganic electrode for organic electroluminescent devices
IBM13 citations83
US9735010B1Aug 15, 2017
Fabrication of semiconductor fin structures
IBM9 citations82
US10657440B2May 19, 2020
Optical synapse for neuromorphic networks
IBM7 citations81
US6448766B1Sep 10, 2002
Method of imaging a magnetic field emanating from a surface using a conventional scanning force microscope
IBM18 citations78
US11521055B2Dec 6, 2022
Optical synapse
IBM2 citations73
US11157807B2Oct 26, 2021
Optical neuron
IBM6 citations73
US10833150B2Nov 10, 2020
Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
IBM4 citations73
US9515090B2Dec 6, 2016
Method to form dual channel group III-V and Si/Ge FINFET CMOS and integrated circuit fabricated using the method
IBM3 citations73
US11138501B2Oct 5, 2021
Hardware-implemented training of an artificial neural network
IBM2 citations72
US10516108B2Dec 24, 2019
Tunable resistive element
IBM3 citations72
US9881921B2Jan 30, 2018
Fabricating a dual gate stack of a CMOS structure
IBM2 citations72
US9786664B2Oct 10, 2017
Fabricating a dual gate stack of a CMOS structure
IBM2 citations72
US10714242B2Jul 14, 2020
Symmetrically tunable electrical resistor
IBM2 citations71
US10447006B2Oct 15, 2019
Electro-optical device with asymmetric, vertical current injection ohmic contacts
IBM2 citations71
US10249492B2Apr 2, 2019
Fabrication of compound semiconductor structures
IBM2 citations71
US9640394B2May 2, 2017
Method for fabricating a semiconductor structure
IBM2 citations71
US9704757B1Jul 11, 2017
Fabrication of semiconductor structures
IBM2 citations70
US6631057B1Oct 7, 2003
Magnetic device with ferromagnetic layer contacting specified yttrium or rare earth element oxide antiferromagnetic layer
IBM11 citations70
US10957854B2Mar 23, 2021
Tunable resistive element
IBM0 citations62
US10338630B2Jul 2, 2019
Optical computing system
IBM1 citations62
US10228280B2Mar 12, 2019
Optical sensor
IBM1 citations62
US11195085B2Dec 7, 2021
Spiking synaptic elements for spiking neural networks
IBM1 citations61
US10395168B2Aug 27, 2019
Tunable optical neuromorphic network
IBM1 citations60
US11615843B2Mar 28, 2023
Controlling voltage resistance through metal-oxide device
IBM0 citations59
US11042346B2Jun 22, 2021
Artificial cochlea
IBM0 citations57
US12389815B2Aug 12, 2025
Filament-metal oxide channel exchange resistive memory device
IBM0 citations53
US10735231B2Aug 4, 2020
Demodulating modulated signals with artificial neural networks
IBM0 citations52
US10228282B2Mar 12, 2019
Optical sensor
IBM0 citations52
US9252157B2Feb 2, 2016
Method to form group III-V and Si/Ge FINFET on insulator and integrated circuit fabricated using the method
IBM1 citations52
US9123585B1Sep 1, 2015
Method to form group III-V and Si/Ge FINFET on insulator
IBM1 citations52
US10007059B2Jun 26, 2018
Semiconductor structure
IBM0 citations51
US9953125B2Apr 24, 2018
Design/technology co-optimization platform for high-mobility channels CMOS technology
IBM1 citations51
US9696488B2Jul 4, 2017
Semiconductor structure
IBM0 citations51
US9564452B1Feb 7, 2017
Fabrication of hybrid semiconductor circuits
IBM0 citations51
US11250315B2Feb 15, 2022
Electrochemical device of variable electrical conductance
IBM0 citations50
US10529562B2Jan 7, 2020
Fabrication of compound semiconductor structures
IBM0 citations50
US10424478B2Sep 24, 2019
Fabrication of semiconductor fin structures
IBM0 citations50
US11674237B2Jun 13, 2023
Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers
IBM0 citations49
US10256092B2Apr 9, 2019
Fabrication of semiconductor structures
IBM0 citations49
US9989703B2Jun 5, 2018
Semiconductor structure and method for manufacturing a semiconductor structure
IBM0 citations41
US9673104B1Jun 6, 2017
Fabrication of a CMOS structure
IBM0 citations40
US10727404B1Jul 28, 2020
Tunable resistive element
IBM0 citations36