P

Inventor

CHANG KAI-KUEN

TW16 patents

Patents

16 patents
US9391196B1Jul 12, 2016

High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereof

UNITED MICROELECTRONICS CORP20 citations91
US9985129B2May 29, 2018

High-voltage metal-oxide-semiconductor transistor and fabrication method thereof

UNITED MICROELECTRONICS CORP6 citations84
US9741850B1Aug 22, 2017

Semiconductor device and method for forming the same

UNITED MICROELECTRONICS CORP12 citations84
US9859417B2Jan 2, 2018

High-voltage metal-oxide-semiconductor transistor and fabrication method thereof

UNITED MICROELECTRONICS CORP4 citations73
US9728616B2Aug 8, 2017

High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereof

UNITED MICROELECTRONICS CORP5 citations72
US9722072B2Aug 1, 2017

Manufacturing method of high-voltage metal-oxide-semiconductor transistor

UNITED MICROELECTRONICS CORP4 citations71
US12342592B2Jun 24, 2025

Manufacturing method of high voltage semiconductor device

UNITED MICROELECTRONICS CORP0 citations58
US11923435B2Mar 5, 2024

High voltage semiconductor device and manufacturing method thereof

UNITED MICROELECTRONICS CORP0 citations58
US10586735B2Mar 10, 2020

Semiconductor device structure including high voltage MOS device

UNITED MICROELECTRONICS CORP0 citations51
US10354878B2Jul 16, 2019

Doping method for semiconductor device

UNITED MICROELECTRONICS CORP0 citations51
US10312379B2Jun 4, 2019

High voltage device

UNITED MICROELECTRONICS CORP0 citations51
US9947746B2Apr 17, 2018

Bipolar junction transistor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations51
US9922881B2Mar 20, 2018

Method for fabricating semiconductor device structure and product thereof

UNITED MICROELECTRONICS CORP0 citations51
US9653558B2May 16, 2017

Semiconductor structure having a dummy contact and manufacturing method thereof

UNITED MICROELECTRONICS CORP0 citations51
US9653343B1May 16, 2017

Method of manufacturing semiconductor device with shallow trench isolation (STI) having edge profile

UNITED MICROELECTRONICS CORP0 citations51
US12356648B2Jul 8, 2025

High voltage transistor

UNITED MICROELECTRONICS CORP0 citations50