Inventor
IMAM MOHAMED
US25 patents
⚠️ This page may combine multiple inventors who share the name “IMAM MOHAMED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
11 patentsUS11575377B2Feb 7, 2023
Switching circuit, gate driver and method of operating a transistor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations71
US11251294B2Feb 15, 2022
High voltage blocking III-V semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations66
US11916068B2Feb 27, 2024
Type III-V semiconductor substrate with monolithically integrated capacitor
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US11545485B2Jan 3, 2023
Type III-V semiconductor substrate with monolithically integrated capacitor
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US11923448B2Mar 5, 2024
High voltage blocking III-V semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations55
US12471348B2Nov 11, 2025
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US12408364B2Sep 2, 2025
Hole draining structure for suppression of hole accumulation
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US12349389B2Jul 1, 2025
Lateral III/V heterostructure field effect transistor
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US12040302B2Jul 16, 2024
Device package having a lateral power transistor with segmented chip pad
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US11862630B2Jan 2, 2024
Semiconductor device having a bidirectional switch and discharge circuit
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US11588024B2Feb 21, 2023
High voltage blocking III-V semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations47
SEMICONDUCTOR COMPONENTS IND
9 patentsUS7208385B2Apr 24, 2007
LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistance
SEMICONDUCTOR COMPONENTS IND20 citations92
US6867083B2Mar 15, 2005
Method of forming a body contact of a transistor and structure therefor
SEMICONDUCTOR COMPONENTS IND39 citations92
US6589845B1Jul 8, 2003
Method of forming a semiconductor device and structure therefor
SEMICONDUCTOR COMPONENTS IND21 citations92
US6773997B2Aug 10, 2004
Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability
SEMICONDUCTOR COMPONENTS IND33 citations91
US6492679B1Dec 10, 2002
Method for manufacturing a high voltage MOSFET device with reduced on-resistance
SEMICONDUCTOR COMPONENTS IND21 citations91
US6448625B1Sep 10, 2002
High voltage metal oxide device with enhanced well region
SEMICONDUCTOR COMPONENTS IND46 citations91
US6507058B1Jan 14, 2003
Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making same
SEMICONDUCTOR COMPONENTS IND7 citations73
US6555877B2Apr 29, 2003
NMOSFET with negative voltage capability formed in P-type substrate and method of making the same
SEMICONDUCTOR COMPONENTS IND2 citations63
US6492687B2Dec 10, 2002
Merged semiconductor device and method
SEMICONDUCTOR COMPONENTS IND4 citations57