Inventor
HATANO TATSUO
JP55 patents
⚠️ This page may combine multiple inventors who share the name “HATANO TATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
38 patentsUS5709757AJan 20, 1998
Film forming and dry cleaning apparatus and method
TOKYO ELECTRON LTD160 citations99
US5989345ANov 23, 1999
Process-gas supply apparatus
TOKYO ELECTRON LTD108 citations98
US5595606AJan 21, 1997
Shower head and film forming apparatus using the same
TOKYO ELECTRON LTD1,174 citations98
US5690743ANov 25, 1997
Liquid material supply apparatus and method
TOKYO ELECTRON LTD79 citations96
US5963834AOct 5, 1999
Method for forming a CVD film
TOKYO ELECTRON LTD62 citations94
US6126994AOct 3, 2000
Liquid material supply apparatus and method
TOKYO ELECTRON LTD16 citations92
US5954887ASep 21, 1999
Cleaning processing method of a film forming apparatus
TOKYO ELECTRON LTD43 citations92
US5704214AJan 6, 1998
Apparatus for removing tramp materials and method therefor
TOKYO ELECTRON LTD28 citations92
US11764092B2Sep 19, 2023
Substrate transfer apparatus and substrate processing system
TOKYO ELECTRON LTD6 citations86
US8029873B2Oct 4, 2011
Film deposition method and film deposition apparatus of metal film
TOKYO ELECTRON LTD7 citations84
US7790626B2Sep 7, 2010
Plasma sputtering film deposition method and equipment
TOKYO ELECTRON LTD8 citations84
US12211720B2Jan 28, 2025
Vacuum transfer device, substrate processing system, and substrate processing method
TOKYO ELECTRON LTD3 citations75
US12183612B2Dec 31, 2024
Substrate transfer apparatus, substrate transfer method, and substrate processing system
TOKYO ELECTRON LTD4 citations75
US11990357B2May 21, 2024
Substrate transport apparatus, substrate transport method, and substrate processing system
TOKYO ELECTRON LTD3 citations75
US7427426B2Sep 23, 2008
CVD method for forming metal film by using metal carbonyl gas
TOKYO ELECTRON LTD6 citations74
US6169032B1Jan 2, 2001
CVD film formation method
TOKYO ELECTRON LTD11 citations74
US6153515ANov 28, 2000
Method of forming multilayered film
TOKYO ELECTRON LTD14 citations74
US9576850B2Feb 21, 2017
Method for manufacturing semiconductor device
TOKYO ELECTRON LTD2 citations73
US6080444AJun 27, 2000
CVD film forming method including annealing and film forming performed at substantially the same pressure
TOKYO ELECTRON LTD11 citations72
US11602856B2Mar 14, 2023
Vacuum transfer device and substrate processing system
TOKYO ELECTRON LTD0 citations63
US8349283B2Jan 8, 2013
Metal recovery method, metal recovery apparatus, gas exhaust system and film forming device using same
TOKYO ELECTRON LTD4 citations63
US8026176B2Sep 27, 2011
Film forming method, plasma film forming apparatus and storage medium
TOKYO ELECTRON LTD6 citations63
US7491430B2Feb 17, 2009
Deposition method for forming a film including metal, nitrogen and carbon
TOKYO ELECTRON LTD5 citations63
US5880526AMar 9, 1999
Barrier metal layer
TOKYO ELECTRON LTD6 citations63
US12033878B2Jul 9, 2024
Substrate transfer apparatus and substrate processing system
TOKYO ELECTRON LTD0 citations62
US10189230B2Jan 29, 2019
Method for forming copper film
TOKYO ELECTRON LTD1 citations62
US7063871B2Jun 20, 2006
CVD process capable of reducing incubation time
TOKYO ELECTRON LTD4 citations62
US12428721B2Sep 30, 2025
Film forming apparatus and film forming method
TOKYO ELECTRON LTD0 citations52
US12327744B2Jun 10, 2025
Substrate transfer device and substrate processing system
TOKYO ELECTRON LTD0 citations52
US11404255B2Aug 2, 2022
Sputtering method and sputtering apparatus
TOKYO ELECTRON LTD0 citations52
US11251027B2Feb 15, 2022
Stage device and processing apparatus
TOKYO ELECTRON LTD0 citations52
US10910215B2Feb 2, 2021
Method of forming later insulating films for MTJ
TOKYO ELECTRON LTD0 citations52
US10068798B2Sep 4, 2018
Method and processing apparatus for performing pre-treatment to form copper wiring in recess formed in substrate
TOKYO ELECTRON LTD1 citations52
US9976217B2May 22, 2018
Film forming method using reversible decomposition reaction
TOKYO ELECTRON LTD1 citations52
US9362167B2Jun 7, 2016
Method of supplying cobalt to recess
TOKYO ELECTRON LTD1 citations52
US9064690B2Jun 23, 2015
Method for forming Cu wiring
TOKYO ELECTRON LTD0 citations52
US7879399B2Feb 1, 2011
CV method using metal carbonyl gas
TOKYO ELECTRON LTD0 citations52
US7344754B2Mar 18, 2008
Film formation method
TOKYO ELECTRON LTD1 citations52
IBM
3 patentsUS6989321B2Jan 24, 2006
Low-pressure deposition of metal layers from metal-carbonyl precursors
IBM41 citations92
US6924223B2Aug 2, 2005
Method of forming a metal layer using an intermittent precursor gas flow process
IBM32 citations91
US7078341B2Jul 18, 2006
Method of depositing metal layers from metal-carbonyl precursors
IBM12 citations84
ISHIZAKA TADAHIRO
3 patentsUS8399353B2Mar 19, 2013
Methods of forming copper wiring and copper film, and film forming system
ISHIZAKA TADAHIRO9 citations82
US8859422B2Oct 14, 2014
Method of forming copper wiring and method and system for forming copper film
ISHIZAKA TADAHIRO3 citations61
US8999841B2Apr 7, 2015
Semiconductor device manufacturing method
ISHIZAKA TADAHIRO0 citations51
KOJIMA YASUHIKO
2 patentsGOMI ATSUSHI
2 patentsCENTRAL GLASS CO LTD
1 patentHARA MASAMICHI
1 patentShowing the top 50 of 55 patents by PatentIndex Score.