Inventor
TSAI FENG-CHIEN
TW13 patents
⚠️ This page may combine multiple inventors who share the name “TSAI FENG-CHIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALWAFERS CO LTD
11 patentsUS12202017B2Jan 21, 2025
Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatus
GLOBALWAFERS CO LTD4 citations80
US12398487B2Aug 26, 2025
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
GLOBALWAFERS CO LTD0 citations60
US11753741B2Sep 12, 2023
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
GLOBALWAFERS CO LTD0 citations60
US12502696B2Dec 23, 2025
Methods for cleaning the pull cable of an ingot puller apparatus
GLOBALWAFERS CO LTD0 citations57
US12491541B2Dec 9, 2025
Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatus
GLOBALWAFERS CO LTD0 citations57
US12491542B2Dec 9, 2025
Methods for cleaning the pull cable of an ingot puller apparatus
GLOBALWAFERS CO LTD0 citations57
US12428750B2Sep 30, 2025
Ingot puller apparatus having silicon feed tubes with kick plates
GLOBALWAFERS CO LTD0 citations48
US12291795B2May 6, 2025
Single crystal growth susceptor assembly with sacrifice ring
GLOBALWAFERS CO LTD0 citations48
US12546028B2Feb 10, 2026
Ingot puller apparatus having dopant feeders for adding a plurality of dopant batches
GLOBALWAFERS CO LTD0 citations45
US12227874B2Feb 18, 2025
Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy
GLOBALWAFERS CO LTD0 citations45
US11959189B2Apr 16, 2024
Process for preparing ingot having reduced distortion at late body length
GLOBALWAFERS CO LTD0 citations45
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
2 patentsUS11111602B2Sep 7, 2021
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
SUNEDISON SEMICONDUCTOR LTD UEN201334164H2 citations70
US10988859B2Apr 27, 2021
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
SUNEDISON SEMICONDUCTOR LTD UEN201334164H0 citations60