Inventor
FEICK HENNING
DE41 patents
⚠️ This page may combine multiple inventors who share the name “FEICK HENNING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
26 patentsUS9166039B2Oct 20, 2015
Lateral transistor component and method for producing same
INFINEON TECHNOLOGIES AG12 citations82
US8809952B2Aug 19, 2014
Lateral transistor component and method for producing same
INFINEON TECHNOLOGIES AG9 citations82
US9905715B2Feb 27, 2018
Controlling of photo-generated charge carriers
INFINEON TECHNOLOGIES AG2 citations72
US10276494B2Apr 30, 2019
One time programmable memory cell and memory array
INFINEON TECHNOLOGIES AG4 citations71
US10541261B2Jan 21, 2020
Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device
INFINEON TECHNOLOGIES AG2 citations70
US10008621B2Jun 26, 2018
Controlling of photo-generated charge carriers
INFINEON TECHNOLOGIES AG1 citations62
US9029049B2May 12, 2015
Method for processing a carrier, a carrier, an electronic device and a lithographic mask
INFINEON TECHNOLOGIES AG1 citations61
US11175389B2Nov 16, 2021
Optical sensor device with deep and shallow control electrodes
INFINEON TECHNOLOGIES AG0 citations60
US10545225B2Jan 28, 2020
Optical sensor device with deep and shallow control electrodes
INFINEON TECHNOLOGIES AG1 citations60
US12176339B2Dec 24, 2024
Electronic device and charge pump circuit
INFINEON TECHNOLOGIES AG0 citations57
US12015096B2Jun 18, 2024
Time of flight sensor device and time of flight sensor arrangement
INFINEON TECHNOLOGIES AG0 citations52
US10707362B2Jul 7, 2020
Controlling of photo-generated charge carriers
INFINEON TECHNOLOGIES AG0 citations51
US9905609B2Feb 27, 2018
Manufacturing of an imager device and imager device
INFINEON TECHNOLOGIES AG0 citations51
US9704913B2Jul 11, 2017
Manufacturing of an imager device and imager device
INFINEON TECHNOLOGIES AG1 citations51
US11594654B2Feb 28, 2023
Method of generating a germanium structure and optical device comprising a germanium structure
INFINEON TECHNOLOGIES AG0 citations50
US10804354B2Oct 13, 2020
Radio frequency resistor element
INFINEON TECHNOLOGIES AG0 citations50
US10241391B2Mar 26, 2019
Method for processing a carrier, a carrier, an electronic device and a lithographic mask
INFINEON TECHNOLOGIES AG0 citations50
US9882600B2Jan 30, 2018
Switching device, a communication device, and a method for processing a carrier
INFINEON TECHNOLOGIES AG1 citations50
US9613812B2Apr 4, 2017
Method for processing a carrier, a carrier, an electronic device and a lithographic mask
INFINEON TECHNOLOGIES AG0 citations50
US10329140B2Jun 25, 2019
Semiconductor device, pressure sensor, microphone, and acceleration sensor
INFINEON TECHNOLOGIES AG0 citations49
US9478555B2Oct 25, 2016
Method for processing a carrier, a carrier, and a split gate field effect transistor structure
INFINEON TECHNOLOGIES AG1 citations49
US9202815B1Dec 1, 2015
Method for processing a carrier, a carrier, and a split gate field effect transistor structure
INFINEON TECHNOLOGIES AG1 citations49
US12557326B2Feb 17, 2026
Transistor device with highly doped source and drain regions
INFINEON TECHNOLOGIES AG0 citations43
US10594966B2Mar 17, 2020
Optical sensor device and method for manufacturing the optical sensor device
INFINEON TECHNOLOGIES AG0 citations42
US10455178B2Oct 22, 2019
Optical sensor device and method for operating a time-of-flight sensor
INFINEON TECHNOLOGIES AG0 citations42
US9984917B2May 29, 2018
Semiconductor device with an interconnect and a method for manufacturing thereof
INFINEON TECHNOLOGIES AG0 citations40
INFINEON TECH DRESDEN GMBH & CO KG
7 patentsUS11527670B2Dec 13, 2022
Photon avalanche diode and methods of producing thereof
INFINEON TECH DRESDEN GMBH & CO KG2 citations73
US11245002B2Feb 8, 2022
Superjunction transistor arrangement and method of producing thereof
INFINEON TECH DRESDEN GMBH & CO KG2 citations73
US12057517B2Aug 6, 2024
Photon avalanche diode having first, second, and third diodes formed in a semiconductor body
INFINEON TECH DRESDEN GMBH & CO KG0 citations62
US12362191B2Jul 15, 2025
Methods and devices related to radio frequency devices
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11948802B2Apr 2, 2024
Methods and devices related to radio frequency devices
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11217453B2Jan 4, 2022
Methods and devices related to radio frequency devices
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11869919B2Jan 9, 2024
Method for manufacturing a sensor device with a buried deep trench structure and sensor device
INFINEON TECH DRESDEN GMBH & CO KG0 citations48
UNIV CALIFORNIA
5 patentsUS7569941B2Aug 4, 2009
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
UNIV CALIFORNIA77 citations98
US6996147B2Feb 7, 2006
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
UNIV CALIFORNIA389 citations98
US6882051B2Apr 19, 2005
Nanowires, nanostructures and devices fabricated therefrom
UNIV CALIFORNIA683 citations98
US7834264B2Nov 16, 2010
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
UNIV CALIFORNIA11 citations92
US7569847B2Aug 4, 2009
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
UNIV CALIFORNIA20 citations92