Inventor

ZHAO ZHIXING

CN10 patents

⚠️ This page may combine multiple inventors who share the name “ZHAO ZHIXING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES US INC

8 patents

US12046670B2Jul 23, 2024

Semiconductor device having a gate contact over an active region

GLOBALFOUNDRIES US INC0 citations61

US11837605B2Dec 5, 2023

Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain

GLOBALFOUNDRIES US INC0 citations61

US12546664B2Feb 10, 2026

Built-in temperature sensors

GLOBALFOUNDRIES US INC0 citations60

US12308801B2May 20, 2025

Back-gate controlled power amplifier

GLOBALFOUNDRIES US INC0 citations60

US11916109B2Feb 27, 2024

Bipolar transistor structures with base having varying horizontal width and methods to form same

GLOBALFOUNDRIES US INC0 citations60

US12532501B2Jan 20, 2026

GLOBALFOUNDRIES DRESDEN MOD 1

2 patents

US12574030B2Mar 10, 2026

Device with inverter functionality and tunable trigger voltage

GLOBALFOUNDRIES DRESDEN MOD 10 citations57

US12268019B2Apr 1, 2025

Ferroelectric field-effect transistors with a hybrid well

GLOBALFOUNDRIES DRESDEN MOD 10 citations57

ZHAO ZHIXING

GLOBALFOUNDRIES US INC

Semiconductor device having a gate contact over an active region

Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain

Built-in temperature sensors

Back-gate controlled power amplifier

Bipolar transistor structures with base having varying horizontal width and methods to form same

Structure with back-gate having oppositely doped semiconductor regions

Stress layout optimization for device performance

Stress layout optimization for device performance

GLOBALFOUNDRIES DRESDEN MOD 1

Device with inverter functionality and tunable trigger voltage

Ferroelectric field-effect transistors with a hybrid well