Inventor

CHOI YOUNG-SUK

US40 patents

⚠️ This page may combine multiple inventors who share the name “CHOI YOUNG-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHOI YOUNG-SUK

SANDISK TECHNOLOGIES LLC

Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten

Multi-resistance MRAM

Multi-resistance MRAM

Multi-resistance MRAM

Composite free layer for magnetoresistive random access memory

Composite free layer for magnetoresistive random access memory

Multi-resistance MRAM

Multi-resistance MRAM

DAEWOO ELECTRONICS CO LTD

Apparatus for inserting rotation shaft of small-sized motor into gear

Apparatus for auomatically press-fitting a turntable

Disc clamping device for alternatively loading a mini disc and a compact disc on a single turntable

Apparatus for automatically press-fitting a turntable

Apparatus for automatically press-fitting a turntable

Checking device for flatness of a drive chassis of a disc player

Device for locking a driving motor of a disc player

HGST Netherlands BV

Magnetoresistive effect devices having enhanced magnetic anisotropy

Underlayer for reference layer of polycrystalline CPP GMR sensor stack

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edges

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a crystalline CoFeX layer and a Heusler alloy layer

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor having a low-coercivity reference layer

Magnetic recording head with CPP-GMR spin-valve sensor and extended pinned layer

Giant magneto resistive sensor and method for making same

FAIRCHILD KR SEMICONDUCTOR LTD

Methods of forming field effect transistors having graded drain region doping profiles therein

Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance

High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage

Power semiconductor device having high breakdown voltage and method for fabricating the same

High voltage integrated circuit including bipolar transistor within high voltage island area

CHOI YOUNG-SUK

Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline MgO tunnel barrier

Method of manufacturing magnetic tunnel junction device and apparatus for manufacturing the same

Method and apparatus for manufacturing magnetoresistive element

Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method

Production method for artificial marble containing amethyst and vermiculite

LG PHILIPS LCD CO LTD

In-plane switching LCD panel having different alignment layers

In-plane switching LCD panel having different alignment layers

CAREY MATTHEW J

Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing

BRINKMAN ELIZABETH ANN

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy

WESTERN DIGITAL TECH INC

Probabilistic neuron circuits

CHARZIN CO LTD

Electric vehicle charger control system linked with energy management system

IBM

CoFeB based magnetic tunnel junction device with boron encapsulation layer

ELF SYSTEM CO LTD

Equipment and method for manufacturing separator for fuel cell