Inventor

GOTTWALD MATTHIAS GEORG

US24 patents

⚠️ This page may combine multiple inventors who share the name “GOTTWALD MATTHIAS GEORG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GOTTWALD MATTHIAS GEORG

QUALCOMM INC

Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)

Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device

Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer

Magnetic tunnel junction (MTJ) device array

Magnetic tunnel junction (MTJ) device array

Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)

Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication

Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials

Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction

Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials

Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)

IBM

Magnetoresistive random-access memory device

Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile

MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropy

Reactive serial resistance reduction for magnetoresistive random-access memory devices

Ordered alloy magnetic tunnel junction with simplified seed structure

Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices

Paramagnetic hexagonal metal phase coupling spacer

Computing devices containing magnetic Josephson Junctions with embedded magnetic field control element

MTJ capping layer structure for improved write error rate slopes and thermal stability

CoFeB based magnetic tunnel junction device with boron encapsulation layer

Semiconductor structure multilayers having a dusting material at an interface between a non-magnetic layer and a magnetic layer