Inventor

SCHLOSS LAWRENCE

US39 patents

⚠️ This page may combine multiple inventors who share the name “SCHLOSS LAWRENCE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHLOSS LAWRENCE

UNITY SEMICONDUCTOR CORP

Conductive metal oxide structures in non volatile re-writable memory devices

Non-volatile memory device ion barrier

Conductive metal oxide structures in non-volatile re-writable memory devices

Array operation using a schottky diode as a non-ohmic isolation device

Memory cell formation using ion implant isolated conductive metal oxide

Threshold device for a memory array

Two-terminal reversibly switchable memory device

Ion barrier cap

Two-terminal reversibly switchable memory device

Conductive metal oxide structures in non-volatile re-writable memory devices

Conductive metal oxide structures in non-volatile re-writable memory devices

Conductive metal oxide structures in non-volatile re-writable memory devices

Conductive metal oxide structures in non-volatile re-writable memory devices

Conductive metal oxide structures in non-volatile re-writable memory devices

LAM RES CORP

Method for preventing line bending during metal fill process

Deposition of low fluorine tungsten by sequential CVD process

Method for preventing line bending during metal fill process

Method of forming low resistivity fluorine free tungsten film without nucleation

Metal fill process for three-dimensional vertical NAND wordline

Forming low resistivity fluorine free tungsten film without nucleation

Tungsten films having low fluorine content

Method for preventing line bending during metal fill process

Molybdenum fill

Multi-layer feature fill

Deposition of molybdenum

SCHLOSS LAWRENCE

Data retention structure for non-volatile memory

Conductive metal oxide structures in non volatile re writable memory devices

Conductive metal oxide structures in non volatile re writable memory devices

Non volatile memory device ion barrier

Non-volatile memory device ion barrier

HEFEI RELIANCE MEMORY LTD

Two-terminal reversibly switchable memory device

Two-terminal reversibly switchable memory device

Two-terminal reversibly switchable memory device

Two-terminal reversibly switchable memory device

LAMBERTSON ROY

Array operation using a schottky diode as a non-ohmic selection device

Array operation using a schottky diode as a non ohmic selection device

RINERSON DARRELL

Memory device using ion implant isolated conductive metal oxide

LAM RES CORPORATION

Non-metal incorporation in molybdenum on dielectric surfaces

BREWER JULIE CASPERSON

Threshold device for a memory array