P

Inventor

GRIVNA GORDON M

US214 patents
⚠️ This page may combine multiple inventors who share the name “GRIVNA GORDON M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEMICONDUCTOR COMPONENTS IND

24 patents
US8012857B2Sep 6, 2011

Semiconductor die singulation method

SEMICONDUCTOR COMPONENTS IND58 citations98
US7989319B2Aug 2, 2011

Semiconductor die singulation method

SEMICONDUCTOR COMPONENTS IND60 citations98
US7985661B2Jul 26, 2011

Semiconductor die singulation method

SEMICONDUCTOR COMPONENTS IND51 citations98
US7781310B2Aug 24, 2010

Semiconductor die singulation method

SEMICONDUCTOR COMPONENTS IND55 citations98
US7411266B2Aug 12, 2008

Semiconductor device having trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND61 citations98
US7253477B2Aug 7, 2007

Semiconductor device edge termination structure

SEMICONDUCTOR COMPONENTS IND118 citations98
US7176524B2Feb 13, 2007

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND91 citations98
US7579632B2Aug 25, 2009

Multi-channel ESD device and method therefor

SEMICONDUCTOR COMPONENTS IND62 citations97
US7482220B2Jan 27, 2009

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND37 citations96
US7285823B2Oct 23, 2007

Superjunction semiconductor device structure

SEMICONDUCTOR COMPONENTS IND57 citations96
US9391135B1Jul 12, 2016

Semiconductor device

SEMICONDUCTOR COMPONENTS IND20 citations93
US9136173B2Sep 15, 2015

Singulation method for semiconductor die having a layer of material along one major surface

SEMICONDUCTOR COMPONENTS IND12 citations93
US8384231B2Feb 26, 2013

Method of forming a semiconductor die

SEMICONDUCTOR COMPONENTS IND33 citations93
US7256119B2Aug 14, 2007

Semiconductor device having trench structures and method

SEMICONDUCTOR COMPONENTS IND38 citations93
US7087925B2Aug 8, 2006

Semiconductor device having reduced capacitance to substrate and method

SEMICONDUCTOR COMPONENTS IND42 citations93
US6621136B2Sep 16, 2003

Semiconductor device having regions of low substrate capacitance

SEMICONDUCTOR COMPONENTS IND33 citations93
US7902601B2Mar 8, 2011

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND13 citations92
US7679146B2Mar 16, 2010

Semiconductor device having sub-surface trench charge compensation regions

SEMICONDUCTOR COMPONENTS IND28 citations92
US6984860B2Jan 10, 2006

Semiconductor device with high frequency parallel plate trench capacitor structure

SEMICONDUCTOR COMPONENTS IND51 citations90
US9299776B2Mar 29, 2016

Method of forming a semiconductor device including trench termination and trench structure therefor

SEMICONDUCTOR COMPONENTS IND10 citations84
US9117802B2Aug 25, 2015

Electronic device including a feature in an opening

SEMICONDUCTOR COMPONENTS IND9 citations84
US8021947B2Sep 20, 2011

Method of forming an insulated gate field effect transistor device having a shield electrode structure

SEMICONDUCTOR COMPONENTS IND13 citations84
US7902075B2Mar 8, 2011

Semiconductor trench structure having a sealing plug and method

SEMICONDUCTOR COMPONENTS IND9 citations84
US7851312B2Dec 14, 2010

Semiconductor component and method of manufacture

SEMICONDUCTOR COMPONENTS IND9 citations84

SEMICONDUCTOR COMPONENTS IND LLC

8 patents

GRIVNA GORDON M

5 patents

MOTOROLA INC

4 patents

JOHNSON CHRIS

2 patents

LOECHELT GARY H

2 patents

SEMICONDUCTOR COMPANENTS IND L

1 patent

PLASMA THERM LLC

1 patent

SEMICONDUCTOR COMPONENT IND LLC

1 patent

PARSEY JR JOHN MICHAEL

1 patent

PLASMA-THERM LLC

1 patent

Showing the top 50 of 214 patents by PatentIndex Score.