Inventor
INOUE YASUO
JP178 patents
⚠️ This page may combine multiple inventors who share the name “INOUE YASUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
34 patentsUS5780888AJul 14, 1998
Semiconductor device with storage node
MITSUBISHI ELECTRIC CORP94 citations99
US5659194AAug 19, 1997
Semiconductor device having metal silicide film
MITSUBISHI ELECTRIC CORP239 citations99
US5656842AAug 12, 1997
Vertical mosfet including a back gate electrode
MITSUBISHI ELECTRIC CORP166 citations99
US5641980AJun 24, 1997
Device having a high concentration region under the channel
MITSUBISHI ELECTRIC CORP127 citations99
US5627390AMay 6, 1997
Semiconductor device with columns
MITSUBISHI ELECTRIC CORP200 citations99
US6383860B2May 7, 2002
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP36 citations96
US6303425B1Oct 16, 2001
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP45 citations96
US6150688ANov 21, 2000
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP75 citations96
US6144072ANov 7, 2000
Semiconductor device formed on insulating layer and method of manufacturing the same
MITSUBISHI ELECTRIC CORP68 citations96
US5872037AFeb 16, 1999
Method for manufacturing a vertical mosfet including a back gate electrode
MITSUBISHI ELECTRIC CORP62 citations96
US5841171ANov 24, 1998
SOI Semiconductor devices
MITSUBISHI ELECTRIC CORP64 citations96
US5801080ASep 1, 1998
Method of manufacturing semiconductor substrate having total and partial dielectric isolation
MITSUBISHI ELECTRIC CORP29 citations96
US5440161AAug 8, 1995
Semiconductor device having an SOI structure and a manufacturing method thereof
MITSUBISHI ELECTRIC CORP91 citations96
US5283455AFeb 1, 1994
Thin film field effect element having an LDD structure
MITSUBISHI ELECTRIC CORP66 citations96
US5001539AMar 19, 1991
Multiple layer static random access memory device
MITSUBISHI ELECTRIC CORP100 citations96
US4694143ASep 15, 1987
Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer
MITSUBISHI ELECTRIC CORP72 citations96
US5736438AApr 7, 1998
Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same
MITSUBISHI ELECTRIC CORP46 citations95
US5514880AMay 7, 1996
Field effect thin-film transistor for an SRAM with reduced standby current
MITSUBISHI ELECTRIC CORP56 citations95
US4984033AJan 8, 1991
Thin film semiconductor device with oxide film on insulating layer
MITSUBISHI ELECTRIC CORP99 citations95
US4822751AApr 18, 1989
Method of producing a thin film semiconductor device
MITSUBISHI ELECTRIC CORP66 citations95
US6653656B2Nov 25, 2003
Semiconductor device formed on insulating layer and method of manufacturing the same
MITSUBISHI ELECTRIC CORP13 citations93
US6649976B2Nov 18, 2003
Semiconductor device having metal silicide film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP25 citations93
US6509583B1Jan 21, 2003
Semiconductor device formed on insulating layer and method of manufacturing the same
MITSUBISHI ELECTRIC CORP20 citations93
US6319805B1Nov 20, 2001
Semiconductor device having metal silicide film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP21 citations93
US6118154ASep 12, 2000
Input/output protection circuit having an SOI structure
MITSUBISHI ELECTRIC CORP33 citations93
US6051494AApr 18, 2000
Semiconductor device having metal silicide film
MITSUBISHI ELECTRIC CORP22 citations93
US6030873AFeb 29, 2000
Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP35 citations93
US5905286AMay 18, 1999
Semiconductor device
MITSUBISHI ELECTRIC CORP18 citations93
US5652453AJul 29, 1997
Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP40 citations93
US5619053AApr 8, 1997
Semiconductor device having an SOI structure
MITSUBISHI ELECTRIC CORP24 citations93
US5381235AJan 10, 1995
Three-dimensional shape measuring device and three-dimensional shape measuring sensor
MITSUBISHI ELECTRIC CORP22 citations93
US4993835AFeb 19, 1991
Apparatus for detecting three-dimensional configuration of object employing optical cutting method
MITSUBISHI ELECTRIC CORP33 citations93
US4874718AOct 17, 1989
Method for forming SOI film
MITSUBISHI ELECTRIC CORP34 citations93
US4812036AMar 14, 1989
Stress evaluation apparatus
MITSUBISHI ELECTRIC CORP28 citations93
HITACHI LTD
6 patentsUS5819054AOct 6, 1998
Storage system realizing scalability and fault tolerance
HITACHI LTD159 citations99
US5640600AJun 17, 1997
Storage controller and bus control method for use therewith
HITACHI LTD116 citations98
US5459856AOct 17, 1995
System having independent access paths for permitting independent access from the host and storage device to respective cache memories
HITACHI LTD89 citations97
US6012119AJan 4, 2000
Storage system
HITACHI LTD31 citations96
US5689729ANov 18, 1997
Storage subsystem having plurality of access paths permitting independent access to cache memory from host and independent access to the cache from rotating storage device
HITACHI LTD31 citations96
US6341335B1Jan 22, 2002
Information processing system for read ahead buffer memory equipped with register and memory controller
HITACHI LTD29 citations93
OLYMPUS OPTICAL CO
3 patentsUS4920053AApr 24, 1990
Method for micromanipulating cells by moving cell-containing vessel on stage of inverted microscope while pricking cells with tip of stylus
OLYMPUS OPTICAL CO71 citations96
US4629862ADec 16, 1986
Sample heater for use in microscopes
OLYMPUS OPTICAL CO109 citations95
US4415952ANov 15, 1983
Light source unit for an optical apparatus
OLYMPUS OPTICAL CO35 citations93
(unassigned)
1 patentKOZO IIZUKA DIRECTOR GENERAL A
1 patentAGENCY IND SCIENCE TECHN
1 patentFUJI PHOTO FILM CO LTD
1 patentTITAN KOGYO KK
1 patentFUJITSU LTD
1 patentJAPAN SPECTROSCOPIC CO
1 patentShowing the top 50 of 178 patents by PatentIndex Score.