P

Inventor

INOUE YASUO

JP178 patents
⚠️ This page may combine multiple inventors who share the name “INOUE YASUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

34 patents
US5780888AJul 14, 1998

Semiconductor device with storage node

MITSUBISHI ELECTRIC CORP94 citations99
US5659194AAug 19, 1997

Semiconductor device having metal silicide film

MITSUBISHI ELECTRIC CORP239 citations99
US5656842AAug 12, 1997

Vertical mosfet including a back gate electrode

MITSUBISHI ELECTRIC CORP166 citations99
US5641980AJun 24, 1997

Device having a high concentration region under the channel

MITSUBISHI ELECTRIC CORP127 citations99
US5627390AMay 6, 1997

Semiconductor device with columns

MITSUBISHI ELECTRIC CORP200 citations99
US6383860B2May 7, 2002

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP36 citations96
US6303425B1Oct 16, 2001

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP45 citations96
US6150688ANov 21, 2000

Semiconductor device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP75 citations96
US6144072ANov 7, 2000

Semiconductor device formed on insulating layer and method of manufacturing the same

MITSUBISHI ELECTRIC CORP68 citations96
US5872037AFeb 16, 1999

Method for manufacturing a vertical mosfet including a back gate electrode

MITSUBISHI ELECTRIC CORP62 citations96
US5841171ANov 24, 1998

SOI Semiconductor devices

MITSUBISHI ELECTRIC CORP64 citations96
US5801080ASep 1, 1998

Method of manufacturing semiconductor substrate having total and partial dielectric isolation

MITSUBISHI ELECTRIC CORP29 citations96
US5440161AAug 8, 1995

Semiconductor device having an SOI structure and a manufacturing method thereof

MITSUBISHI ELECTRIC CORP91 citations96
US5283455AFeb 1, 1994

Thin film field effect element having an LDD structure

MITSUBISHI ELECTRIC CORP66 citations96
US5001539AMar 19, 1991

Multiple layer static random access memory device

MITSUBISHI ELECTRIC CORP100 citations96
US4694143ASep 15, 1987

Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer

MITSUBISHI ELECTRIC CORP72 citations96
US5736438AApr 7, 1998

Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same

MITSUBISHI ELECTRIC CORP46 citations95
US5514880AMay 7, 1996

Field effect thin-film transistor for an SRAM with reduced standby current

MITSUBISHI ELECTRIC CORP56 citations95
US4984033AJan 8, 1991

Thin film semiconductor device with oxide film on insulating layer

MITSUBISHI ELECTRIC CORP99 citations95
US4822751AApr 18, 1989

Method of producing a thin film semiconductor device

MITSUBISHI ELECTRIC CORP66 citations95
US6653656B2Nov 25, 2003

Semiconductor device formed on insulating layer and method of manufacturing the same

MITSUBISHI ELECTRIC CORP13 citations93
US6649976B2Nov 18, 2003

Semiconductor device having metal silicide film and manufacturing method thereof

MITSUBISHI ELECTRIC CORP25 citations93
US6509583B1Jan 21, 2003

Semiconductor device formed on insulating layer and method of manufacturing the same

MITSUBISHI ELECTRIC CORP20 citations93
US6319805B1Nov 20, 2001

Semiconductor device having metal silicide film and manufacturing method thereof

MITSUBISHI ELECTRIC CORP21 citations93
US6118154ASep 12, 2000

Input/output protection circuit having an SOI structure

MITSUBISHI ELECTRIC CORP33 citations93
US6051494AApr 18, 2000

Semiconductor device having metal silicide film

MITSUBISHI ELECTRIC CORP22 citations93
US6030873AFeb 29, 2000

Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof

MITSUBISHI ELECTRIC CORP35 citations93
US5905286AMay 18, 1999

Semiconductor device

MITSUBISHI ELECTRIC CORP18 citations93
US5652453AJul 29, 1997

Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof

MITSUBISHI ELECTRIC CORP40 citations93
US5619053AApr 8, 1997

Semiconductor device having an SOI structure

MITSUBISHI ELECTRIC CORP24 citations93
US5381235AJan 10, 1995

Three-dimensional shape measuring device and three-dimensional shape measuring sensor

MITSUBISHI ELECTRIC CORP22 citations93
US4993835AFeb 19, 1991

Apparatus for detecting three-dimensional configuration of object employing optical cutting method

MITSUBISHI ELECTRIC CORP33 citations93
US4874718AOct 17, 1989

Method for forming SOI film

MITSUBISHI ELECTRIC CORP34 citations93
US4812036AMar 14, 1989

Stress evaluation apparatus

MITSUBISHI ELECTRIC CORP28 citations93

HITACHI LTD

6 patents

OLYMPUS OPTICAL CO

3 patents

(unassigned)

1 patent

KOZO IIZUKA DIRECTOR GENERAL A

1 patent

AGENCY IND SCIENCE TECHN

1 patent

FUJI PHOTO FILM CO LTD

1 patent

TITAN KOGYO KK

1 patent

FUJITSU LTD

1 patent

JAPAN SPECTROSCOPIC CO

1 patent

Showing the top 50 of 178 patents by PatentIndex Score.