Inventor

SHIN HYEONJIN

KR170 patents

Patents

50 patents

US10079144B2Sep 18, 2018

Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer

SAMSUNG ELECTRONICS CO LTD25 citations94

US11682622B2Jun 20, 2023

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD5 citations86

US10790356B2Sep 29, 2020

Semiconductor device including metal-2 dimensional material-semiconductor contact

SAMSUNG ELECTRONICS CO LTD7 citations84

US10553684B2Feb 4, 2020

Optical sensor and image sensor including graphene quantum dots

SAMSUNG ELECTRONICS CO LTD5 citations84

US10522664B2Dec 31, 2019

Electronic device including a tunnel layer

SAMSUNG ELECTRONICS CO LTD7 citations84

US10217819B2Feb 26, 2019

Semiconductor device including metal-2 dimensional material-semiconductor contact

SAMSUNG ELECTRONICS CO LTD6 citations84

US10128490B2Nov 13, 2018

Anode layer, lithium secondary battery including anode layer, and method of manufacturing anode layer

SAMSUNG ELECTRONICS CO LTD14 citations84

US9935184B2Apr 3, 2018

Electronic device including a tunneling layer

SAMSUNG ELECTRONICS CO LTD6 citations84

US9595580B2Mar 14, 2017

Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element

SAMSUNG ELECTRONICS CO LTD11 citations84

US9583358B2Feb 28, 2017

Hardmask composition and method of forming pattern by using the hardmask composition

SAMSUNG ELECTRONICS CO LTD14 citations84

US10199958B2Feb 5, 2019

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD10 citations83

US11588034B2Feb 21, 2023

Field effect transistor including gate insulating layer formed of two-dimensional material

SAMSUNG ELECTRONICS CO LTD4 citations74

US12131905B2Oct 29, 2024

Semiconductor device including metal-2 dimensional material-semiconductor contact

SAMSUNG ELECTRONICS CO LTD2 citations73

US11217531B2Jan 4, 2022

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US11180373B2Nov 23, 2021

Nanocrystalline graphene and method of forming nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD2 citations73

US11088077B2Aug 10, 2021

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US11069619B2Jul 20, 2021

Interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD3 citations73

US10996556B2May 4, 2021

Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles

SAMSUNG ELECTRONICS CO LTD3 citations73

US10971451B2Apr 6, 2021

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

SAMSUNG ELECTRONICS CO LTD2 citations73

US10937885B2Mar 2, 2021

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US10928723B2Feb 23, 2021

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD2 citations73

US10873275B2Dec 22, 2020

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD3 citations73

US10684560B2Jun 16, 2020

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD6 citations73

US10587207B2Mar 10, 2020

Triboelectric generator using surface plasmon resonance

SAMSUNG ELECTRONICS CO LTD5 citations73

US10559660B2Feb 11, 2020

Semiconductor device including metal-2 dimensional material-semiconductor contact

SAMSUNG ELECTRONICS CO LTD3 citations73

US10539868B2Jan 21, 2020

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

SAMSUNG ELECTRONICS CO LTD3 citations73

US10424490B2Sep 24, 2019

Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask composition

SAMSUNG ELECTRONICS CO LTD3 citations73

US10229881B2Mar 12, 2019

Layer structure including diffusion barrier layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations73

US10217513B2Feb 26, 2019

Phase change memory devices including two-dimensional material and methods of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations73

US10191367B2Jan 29, 2019

Pellicle for photomask and exposure apparatus including the pellicle

SAMSUNG ELECTRONICS CO LTD4 citations73

US10134628B2Nov 20, 2018

Multilayer structure including diffusion barrier layer and device including the multilayer structure

SAMSUNG ELECTRONICS CO LTD4 citations73

US10014799B2Jul 3, 2018

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD5 citations73

US9922825B2Mar 20, 2018

Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing

SAMSUNG ELECTRONICS CO LTD2 citations73

US9905422B2Feb 27, 2018

Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask

SAMSUNG ELECTRONICS CO LTD2 citations73

US9761532B2Sep 12, 2017

Hybrid interconnect structure and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD4 citations73

US9721794B2Aug 1, 2017

Hardmask composition and method of forming patterning by using the hardmask composition

SAMSUNG ELECTRONICS CO LTD5 citations73

US10850985B2Dec 1, 2020

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

SAMSUNG ELECTRONICS CO LTD3 citations72

US10808142B2Oct 20, 2020

Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition

SAMSUNG ELECTRONICS CO LTD2 citations72

US10551735B2Feb 4, 2020

Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle

SAMSUNG ELECTRONICS CO LTD2 citations72

US11508664B2Nov 22, 2022

Interconnect structure including graphene-metal barrier and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations70

US11708633B2Jul 25, 2023

Metal chalcogenide film and method and device for manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations69

US10873277B2Dec 22, 2020

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD3 citations69

US10683208B2Jun 16, 2020

MXene nanosheet and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD4 citations69

US10770990B2Sep 8, 2020

Triboelectric generator

SAMSUNG ELECTRONICS CO LTD3 citations68

US10331033B2Jun 25, 2019

Hardmask composition and method of forming pattern using the hardmask composition

SAMSUNG ELECTRONICS CO LTD2 citations63

US12506074B2Dec 23, 2025

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62

US12473662B2Nov 18, 2025

Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film

SAMSUNG ELECTRONICS CO LTD0 citations62

Showing the top 50 of 170 patents by PatentIndex Score.

SHIN HYEONJIN

Patents

Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Semiconductor device including metal-2 dimensional material-semiconductor contact

Optical sensor and image sensor including graphene quantum dots

Electronic device including a tunnel layer

Semiconductor device including metal-2 dimensional material-semiconductor contact

Anode layer, lithium secondary battery including anode layer, and method of manufacturing anode layer

Electronic device including a tunneling layer

Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element

Hardmask composition and method of forming pattern by using the hardmask composition

Triboelectric generator

Field effect transistor including gate insulating layer formed of two-dimensional material

Graphene structure and method of forming the graphene structure

Method of forming carbon layer and method of forming interconnect structure

Graphene structure and method of forming graphene structure

Semiconductor device including metal-2 dimensional material-semiconductor contact

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Nanocrystalline graphene and method of forming nanocrystalline graphene

Layer structure including diffusion barrier layer and method of manufacturing the same

Interconnect structure and electronic device employing the same

Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles

Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure

Electronic device and method of manufacturing the same

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Triboelectric generator

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Triboelectric generator using surface plasmon resonance

Semiconductor device including metal-2 dimensional material-semiconductor contact

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask composition

Layer structure including diffusion barrier layer and method of manufacturing the same

Phase change memory devices including two-dimensional material and methods of operating the same

Pellicle for photomask and exposure apparatus including the pellicle

Multilayer structure including diffusion barrier layer and device including the multilayer structure

Triboelectric generator

Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing

Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask

Hybrid interconnect structure and electronic device employing the same

Hardmask composition and method of forming patterning by using the hardmask composition

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition

Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle

Interconnect structure including graphene-metal barrier and method of manufacturing the same

Metal chalcogenide film and method and device for manufacturing the same

Triboelectric generator

MXene nanosheet and manufacturing method thereof

Triboelectric generator

Hardmask composition and method of forming pattern using the hardmask composition

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film