Inventor · disambiguated record
Victor J. Silvestri
Also filed as: SILVESTRI VICTOR · SILVESTRI VICTOR J
25 granted patents·1,228 citations·filing 1975–1993
97Inventor score
Top patents by PatentIndex Score
25 records- 0195US4528047AMethod for forming a void free isolation structure utilizing etch and refill techniquesIBM·Filed 1984·Granted Jul 9, 1985·105 cites·12 claims
- 0294US5234535AMethod of producing a thin silicon-on-insulator layerIBM·Filed 1992·Granted Aug 10, 1993·197 cites·24 claims
- 0392US4758531AMethod of making defect free silicon islands using SEGIBM·Filed 1987·Granted Jul 19, 1988·100 cites·16 claims
- 0488US5220405AInterferometer for in situ measurement of thin film thickness changesIBM·Filed 1991·Granted Jun 15, 1993·65 cites·24 claims
- 0588US4473598AMethod of filling trenches with silicon and structuresIBM·Filed 1982·Granted Sep 25, 1984·74 cites·26 claims
- 0687US4526631AMethod for forming a void free isolation pattern utilizing etch and refill techniquesIBM·Filed 1984·Granted Jul 2, 1985·78 cites·10 claims
- 0786US4745081AMethod of trench fillingIBM·Filed 1985·Granted May 17, 1988·67 cites·28 claims
- 0882US5392124AMethod and apparatus for real-time, in-situ endpoint detection and closed loop etch process controlIBM·Filed 1993·Granted Feb 21, 1995·52 cites·40 claims
- 0981US4381818APorous film heat transferIBM·Filed 1980·Granted May 3, 1983·54 cites·3 claims
- 1079US5227658ABuried air dielectric isolation of silicon islandsIBM·Filed 1991·Granted Jul 13, 1993·63 cites·6 claims
- 1178US4924284AMethod of trench fillingIBM·Filed 1988·Granted May 8, 1990·41 cites·19 claims
- 1273US5315151ATransistor structure utilizing a deposited epitaxial base regionIBM·Filed 1993·Granted May 24, 1994·34 cites·9 claims
- 1372US5381234AMethod and apparatus for real-time film surface detection for large area wafersIBM·Filed 1993·Granted Jan 10, 1995·36 cites·23 claims
- 1472US5232866AIsolated films using an air dielectricIBM·Filed 1991·Granted Aug 3, 1993·48 cites·9 claims
- 1571US4689656AMethod for forming a void free isolation pattern and resulting structureIBM·Filed 1986·Granted Aug 25, 1987·41 cites·6 claims
- 1670US5061652AMethod of manufacturing a semiconductor device structure employing a multi-level epitaxial structureIBM·Filed 1990·Granted Oct 29, 1991·53 cites·11 claims
- 1765US5386121AIn situ, non-destructive CVD surface monitorIBM·Filed 1993·Granted Jan 31, 1995·24 cites·14 claims
- 1863US3974003AChemical vapor deposition of dielectric films containing Al, N, and SiIBM·Filed 1975·Granted Aug 10, 1976·22 cites·38 claims
- 1955US4274891AMethod of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly depositionIBM·Filed 1979·Granted Jun 23, 1981·15 cites·34 claims
- 2054US4425574ABuried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication thereforIBM·Filed 1981·Granted Jan 10, 1984·16 cites·7 claims
- 2153US4728624ASelective epitaxial growth structure and isolationIBM·Filed 1985·Granted Mar 1, 1988·14 cites·10 claims
- 2241US4680614APlanar void free isolation structureBEYER KLAUS D·Filed 1985·Granted Jul 14, 1987·13 cites·7 claims
- 2336US5159429ASemiconductor device structure employing a multi-level epitaxial structure and method of manufacturing sameIBM·Filed 1992·Granted Oct 27, 1992·9 cites·6 claims
- 2436US4908691ASelective epitaxial growth structure and isolationIBM·Filed 1987·Granted Mar 13, 1990·5 cites·15 claims
- 2532US4960717AFabrication of dielectrically isolated integrated circuit devicesIBM·Filed 1988·Granted Oct 2, 1990·2 cites·1 claims
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