Inventor
KATAYAMA MASATAKE
JP24 patents
⚠️ This page may combine multiple inventors who share the name “KATAYAMA MASATAKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
22 patentsUS5749974AMay 12, 1998
Method of chemical vapor deposition and reactor therefor
SHINETSU HANDOTAI KK101 citations97
US6008128ADec 28, 1999
Method for smoothing surface of silicon single crystal substrate
SHINETSU HANDOTAI KK74 citations96
US5514235AMay 7, 1996
Method of making bonded wafers
SHINETSU HANDOTAI KK56 citations96
US5478408ADec 26, 1995
SOI substrate and manufacturing method therefor
SHINETSU HANDOTAI KK63 citations96
US5938840AAug 17, 1999
Method for vapor phase growth
SHINETSU HANDOTAI KK17 citations92
US5804494ASep 8, 1998
Method of fabricating bonded wafer
SHINETSU HANDOTAI KK20 citations92
US5755878AMay 26, 1998
Method for vapor phase growth
SHINETSU HANDOTAI KK30 citations92
US5427052AJun 27, 1995
Method and apparatus for production of extremely thin SOI film substrate
SHINETSU HANDOTAI KK36 citations92
US5376215ADec 27, 1994
Apparatus for production of extremely thin SOI film substrate
SHINETSU HANDOTAI KK23 citations92
US5223080AJun 29, 1993
Method for controlling thickness of single crystal thin-film layer in soi substrate
SHINETSU HANDOTAI KK29 citations92
US5183783AFeb 2, 1993
Method for production of dielectric-separation substrate
SHINETSU HANDOTAI KK52 citations92
US5124274AJun 23, 1992
Method for production of dielectric-separation substrate
SHINETSU HANDOTAI KK26 citations92
US5650353AJul 22, 1997
Method for production of SOI substrate
SHINETSU HANDOTAI KK53 citations91
US5240883AAug 31, 1993
Method of fabricating soi substrate with uniform thin silicon film
SHINETSU HANDOTAI KK25 citations91
US5998281ADec 7, 1999
SOI wafer and method for the preparation thereof
SHINETSU HANDOTAI KK14 citations74
US5538904AJul 23, 1996
Method of estimating quantity of boron at bonding interface in bonded wafer
SHINETSU HANDOTAI KK8 citations73
US5759426AJun 2, 1998
Heat treatment jig for semiconductor wafers and a method for treating a surface of the same
SHINETSU HANDOTAI KK11 citations71
US5393370AFeb 28, 1995
Method of making a SOI film having a more uniform thickness in a SOI substrate
SHINETSU HANDOTAI KK15 citations71
US5171708ADec 15, 1992
Method of boron diffusion into semiconductor wafers having reduced stacking faults
SHINETSU HANDOTAI KK11 citations68
US5696034ADec 9, 1997
Method for producing semiconductor substrate
SHINETSU HANDOTAI KK8 citations65
US5718762AFeb 17, 1998
Method for vapor-phase growth
SHINETSU HANDOTAI KK5 citations62
US6048793AApr 11, 2000
Method and apparatus for thin film growth
SHINETSU HANDOTAI KK1 citations51