P

Inventor

KATAYAMA MASATAKE

JP24 patents
⚠️ This page may combine multiple inventors who share the name “KATAYAMA MASATAKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINETSU HANDOTAI KK

22 patents
US5749974AMay 12, 1998

Method of chemical vapor deposition and reactor therefor

SHINETSU HANDOTAI KK101 citations97
US6008128ADec 28, 1999

Method for smoothing surface of silicon single crystal substrate

SHINETSU HANDOTAI KK74 citations96
US5514235AMay 7, 1996

Method of making bonded wafers

SHINETSU HANDOTAI KK56 citations96
US5478408ADec 26, 1995

SOI substrate and manufacturing method therefor

SHINETSU HANDOTAI KK63 citations96
US5938840AAug 17, 1999

Method for vapor phase growth

SHINETSU HANDOTAI KK17 citations92
US5804494ASep 8, 1998

Method of fabricating bonded wafer

SHINETSU HANDOTAI KK20 citations92
US5755878AMay 26, 1998

Method for vapor phase growth

SHINETSU HANDOTAI KK30 citations92
US5427052AJun 27, 1995

Method and apparatus for production of extremely thin SOI film substrate

SHINETSU HANDOTAI KK36 citations92
US5376215ADec 27, 1994

Apparatus for production of extremely thin SOI film substrate

SHINETSU HANDOTAI KK23 citations92
US5223080AJun 29, 1993

Method for controlling thickness of single crystal thin-film layer in soi substrate

SHINETSU HANDOTAI KK29 citations92
US5183783AFeb 2, 1993

Method for production of dielectric-separation substrate

SHINETSU HANDOTAI KK52 citations92
US5124274AJun 23, 1992

Method for production of dielectric-separation substrate

SHINETSU HANDOTAI KK26 citations92
US5650353AJul 22, 1997

Method for production of SOI substrate

SHINETSU HANDOTAI KK53 citations91
US5240883AAug 31, 1993

Method of fabricating soi substrate with uniform thin silicon film

SHINETSU HANDOTAI KK25 citations91
US5998281ADec 7, 1999

SOI wafer and method for the preparation thereof

SHINETSU HANDOTAI KK14 citations74
US5538904AJul 23, 1996

Method of estimating quantity of boron at bonding interface in bonded wafer

SHINETSU HANDOTAI KK8 citations73
US5759426AJun 2, 1998

Heat treatment jig for semiconductor wafers and a method for treating a surface of the same

SHINETSU HANDOTAI KK11 citations71
US5393370AFeb 28, 1995

Method of making a SOI film having a more uniform thickness in a SOI substrate

SHINETSU HANDOTAI KK15 citations71
US5171708ADec 15, 1992

Method of boron diffusion into semiconductor wafers having reduced stacking faults

SHINETSU HANDOTAI KK11 citations68
US5696034ADec 9, 1997

Method for producing semiconductor substrate

SHINETSU HANDOTAI KK8 citations65
US5718762AFeb 17, 1998

Method for vapor-phase growth

SHINETSU HANDOTAI KK5 citations62
US6048793AApr 11, 2000

Method and apparatus for thin film growth

SHINETSU HANDOTAI KK1 citations51

SHIN ETSU HANDOTUI CO LTD

1 patent

SHIN ETSU HANDOTAI LTD

1 patent