Inventor

SHINOMIYA MASARU

JP18 patents

⚠️ This page may combine multiple inventors who share the name “SHINOMIYA MASARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINOMIYA MASARU

SANKEN ELECTRIC CO LTD

Silicon-based substrate having first and second portions

Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate

Semiconductor base having a composition graded buffer layer stack

Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor device

Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device

Semiconductor substrate and semiconductor device

Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device

Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device

Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor device

Semiconductor device

SHINETSU HANDOTAI KK

Method for producing silicon single crystal wafer and silicon single crystal wafer

Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device

Method of boron diffusion into semiconductor wafers having reduced stacking faults

Method for manufacturing silicon wafer

Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth

Method for producing semiconductor epitaxial wafer and semiconductor epitaxial wafer

Method for manufacturing nitride semiconductor device

SHIN ETSU HANDOTAI CO LTD

Method for manufacturing epitaxial wafer, silicon-based substrate for epitaxial growth, and epitaxial wafer