Inventor
DOKUMACI OMER O
US2 patents
Patents
2 patentsUS6906360B2Jun 14, 2005
Structure and method of making strained channel CMOS transistors having lattice-mismatched epitaxial extension and source and drain regions
IBM55 citations94
US7297583B2Nov 20, 2007
Method of making strained channel CMOS transistors having lattice-mismatched epitaxial
IBM13 citations82