Inventor
GIVENS JOHN H
US52 patents
⚠️ This page may combine multiple inventors who share the name “GIVENS JOHN H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
46 patentsUS6080655AJun 27, 2000
Method for fabricating conductive components in microelectronic devices and substrate structures thereof
MICRON TECHNOLOGY INC47 citations96
US6060386AMay 9, 2000
Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices
MICRON TECHNOLOGY INC82 citations96
US6057231AMay 2, 2000
Method for improved metal fill by treatment of mobility layers
MICRON TECHNOLOGY INC40 citations96
US5985103ANov 16, 1999
Method for improved bottom and side wall coverage of high aspect ratio features
MICRON TECHNOLOGY INC61 citations96
US5956612ASep 21, 1999
Trench/hole fill processes for semiconductor fabrication
MICRON TECHNOLOGY INC58 citations96
US5726100AMar 10, 1998
Method of forming contact vias and interconnect channels in a dielectric layer stack with a single mask
MICRON TECHNOLOGY INC58 citations96
US5658438AAug 19, 1997
Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features
MICRON TECHNOLOGY INC79 citations96
US6091148AJul 18, 2000
Electrical connection for a semiconductor structure
MICRON TECHNOLOGY INC45 citations94
US6812139B2Nov 2, 2004
Method for metal fill by treatment of mobility layers
MICRON TECHNOLOGY INC17 citations93
US6482735B1Nov 19, 2002
Method for improved metal fill by treatment of mobility layers
MICRON TECHNOLOGY INC23 citations93
US6087711AJul 11, 2000
Integrated circuit metallization with superconductor BEOL wiring
MICRON TECHNOLOGY INC26 citations93
US6060385AMay 9, 2000
Method of making an interconnect structure
MICRON TECHNOLOGY INC28 citations93
US6054768AApr 25, 2000
Metal fill by treatment of mobility layers
MICRON TECHNOLOGY INC24 citations93
US5980657ANov 9, 1999
Alloy for enhanced filling of high aspect ratio dual damascene structures
MICRON TECHNOLOGY INC27 citations93
US6316360B1Nov 13, 2001
High aspect ratio metallization structures for shallow junction devices, and methods of forming the same
MICRON TECHNOLOGY INC16 citations92
US6200895B1Mar 13, 2001
Method of forming an electrical connection
MICRON TECHNOLOGY INC26 citations91
US6267852B1Jul 31, 2001
Method of forming a sputtering apparatus
MICRON TECHNOLOGY INC18 citations90
US5807467ASep 15, 1998
In situ preclean in a PVD chamber with a biased substrate configuration
MICRON TECHNOLOGY INC37 citations90
US7510961B2Mar 31, 2009
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
MICRON TECHNOLOGY INC6 citations74
US6984874B2Jan 10, 2006
Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDT
MICRON TECHNOLOGY INC6 citations74
US6784550B2Aug 31, 2004
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
MICRON TECHNOLOGY INC5 citations74
US6774035B2Aug 10, 2004
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
MICRON TECHNOLOGY INC7 citations74
US6689693B2Feb 10, 2004
Methods for utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC4 citations74
US6537903B2Mar 25, 2003
Processing methods for providing metal-comprising materials within high aspect ratio openings
MICRON TECHNOLOGY INC6 citations74
US6461963B1Oct 8, 2002
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC6 citations74
US6404053B2Jun 11, 2002
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure
MICRON TECHNOLOGY INC13 citations74
US6319813B1Nov 20, 2001
Semiconductor processing methods of forming integrated circuitry and integrated circuitry constructions
MICRON TECHNOLOGY INC6 citations74
US6316356B1Nov 13, 2001
Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
MICRON TECHNOLOGY INC8 citations74
US6309946B1Oct 30, 2001
Reduced RC delay between adjacent substrate wiring lines
MICRON TECHNOLOGY INC7 citations74
US6297156B1Oct 2, 2001
Method for enhanced filling of high aspect ratio dual damascene structures
MICRON TECHNOLOGY INC9 citations74
US6271593B1Aug 7, 2001
Method for fabricating conductive components in microelectronic devices and substrate structures therefor
MICRON TECHNOLOGY INC13 citations74
US6133133AOct 17, 2000
Method for making an electrical contact to a node location and process for forming a conductive line or other circuit component
MICRON TECHNOLOGY INC6 citations74
US5888896AMar 30, 1999
Method for making an electrical contact to a node location and process for forming a conductive line or other circuit component
MICRON TECHNOLOGY INC6 citations74
US5835987ANov 10, 1998
Reduced RC delay between adjacent substrate wiring lines
MICRON TECHNOLOGY INC8 citations74
US5776828AJul 7, 1998
Reduced RC delay between adjacent substrate wiring lines
MICRON TECHNOLOGY INC7 citations74
US6320261B1Nov 20, 2001
High aspect ratio metallization structures for shallow junction devices, and methods of forming the same
MICRON TECHNOLOGY INC10 citations73
US6051121AApr 18, 2000
Deposition chamber with a biased substrate configuration
MICRON TECHNOLOGY INC10 citations71
US6790764B2Sep 14, 2004
Processing methods for providing metal-comprising materials within high aspect ratio openings
MICRON TECHNOLOGY INC1 citations63
US6781235B1Aug 24, 2004
Three-level unitary interconnect structure
MICRON TECHNOLOGY INC2 citations63
US6534408B2Mar 18, 2003
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC2 citations63
US6396119B1May 28, 2002
Reduced RC delay between adjacent substrate wiring lines
MICRON TECHNOLOGY INC2 citations63
US6274253B1Aug 14, 2001
Processing methods for providing metal-comprising materials within high aspect ratio openings
MICRON TECHNOLOGY INC3 citations63
US6080653AJun 27, 2000
Method for making an electrical contact to a node location and process for forming a conductive line or other circuit component
MICRON TECHNOLOGY INC1 citations63
US5908813AJun 1, 1999
Method making integrated circuit metallization with superconductor BEOL wiring
MICRON TECHNOLOGY INC4 citations63
US6787472B2Sep 7, 2004
Utilization of disappearing silicon hard mask for fabrication of semiconductor structures
MICRON TECHNOLOGY INC0 citations52
US6787447B2Sep 7, 2004
Semiconductor processing methods of forming integrated circuitry
MICRON TECHNOLOGY INC1 citations52
IBM
3 patentsUS ARMY
1 patentShowing the top 50 of 52 patents by PatentIndex Score.