Inventor
UEDA HIROKAZU
JP38 patents
⚠️ This page may combine multiple inventors who share the name “UEDA HIROKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
18 patentsUS10249498B2Apr 2, 2019
Method for using heated substrates for process chemistry control
TOKYO ELECTRON LTD41 citations94
US9658106B2May 23, 2017
Plasma processing apparatus and measurement method
TOKYO ELECTRON LTD4 citations73
US11972929B2Apr 30, 2024
Processing apparatus and film forming method
TOKYO ELECTRON LTD2 citations72
US10388524B2Aug 20, 2019
Film forming method, boron film, and film forming apparatus
TOKYO ELECTRON LTD2 citations71
US12247768B2Mar 11, 2025
Electrocaloric effect element, heat transfer device, semiconductor manufacturing device, and electrocaloric effect element control method
TOKYO ELECTRON LTD0 citations62
US12112921B2Oct 8, 2024
Plasma processing method and plasma processing apparatus
TOKYO ELECTRON LTD0 citations62
US11615957B2Mar 28, 2023
Method for forming boron-based film, formation apparatus
TOKYO ELECTRON LTD0 citations61
US9165771B2Oct 20, 2015
Pulsed gas plasma doping method and apparatus
TOKYO ELECTRON LTD3 citations61
US12060641B2Aug 13, 2024
Film forming method and film forming apparatus
TOKYO ELECTRON LTD0 citations60
US12417928B2Sep 16, 2025
Substrate processing method and substrate processing system
TOKYO ELECTRON LTD0 citations59
US12011738B2Jun 18, 2024
Substrate processing method and ionic liquid
TOKYO ELECTRON LTD0 citations56
US11145522B2Oct 12, 2021
Method of forming boron-based film, and film forming apparatus
TOKYO ELECTRON LTD0 citations52
US9029249B2May 12, 2015
Plasma doping apparatus and plasma doping method
TOKYO ELECTRON LTD0 citations51
US12077865B2Sep 3, 2024
Film forming method and film forming apparatus
TOKYO ELECTRON LTD0 citations50
US11842886B2Dec 12, 2023
Plasma processing method and plasma processing apparatus
TOKYO ELECTRON LTD0 citations50
US12406862B2Sep 2, 2025
Vacuum processing apparatus and oxidizing gas removal method
TOKYO ELECTRON LTD0 citations48
US12486575B2Dec 2, 2025
Apparatus for processing substrate, gas shower head, and method for processing substrate
TOKYO ELECTRON LTD0 citations44
US9472404B2Oct 18, 2016
Doping method, doping apparatus and method of manufacturing semiconductor device
TOKYO ELECTRON LTD0 citations41
MICRON TECHNOLOGY INC
7 patentsUS7366051B2Apr 29, 2008
Word line driver circuitry and methods for using the same
MICRON TECHNOLOGY INC12 citations84
US7269091B2Sep 11, 2007
Word line driver circuitry and methods for using the same
MICRON TECHNOLOGY INC11 citations84
US6873559B2Mar 29, 2005
Method and apparatus for enhanced sensing of low voltage memory
MICRON TECHNOLOGY INC12 citations84
US6830977B1Dec 14, 2004
Methods of forming an isolation trench in a semiconductor, methods of forming an isolation trench in a surface of a silicon wafer, methods of forming an isolation trench-isolated transistor, trench-isolated transistor, trench isolation structures formed in a semiconductor, memory cells and drams
MICRON TECHNOLOGY INC12 citations72
US7764567B2Jul 27, 2010
Word line driver circuitry and methods for using the same
MICRON TECHNOLOGY INC2 citations63
US7116596B2Oct 3, 2006
Method of apparatus for enhanced sensing of low voltage memory
MICRON TECHNOLOGY INC0 citations52
US7268402B2Sep 11, 2007
Memory cell with trench-isolated transistor including first and second isolation trenches
MICRON TECHNOLOGY INC0 citations50
KMT SEMICONDUCTOR LTD
2 patentsUS6894354B2May 17, 2005
Trench isolated transistors, trench isolation structures, memory cells, and DRAMs
KMT SEMICONDUCTOR LTD26 citations89
US6387735B1May 14, 2002
Method for manufacturing field effect transistor capable of successfully controlling transistor characteristics relating to the short-channel effect
KMT SEMICONDUCTOR LTD12 citations72