Inventor

HAH SANG-ROK

KR43 patents

Patents

43 patents

US6626968B2Sep 30, 2003

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD53 citations96

US6914001B2Jul 5, 2005

Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same

SAMSUNG ELECTRONICS CO LTD20 citations93

US6610596B1Aug 26, 2003

Method of forming metal interconnection using plating and semiconductor device manufactured by the method

SAMSUNG ELECTRONICS CO LTD33 citations93

US6924228B2Aug 2, 2005

Method of forming a via contact structure using a dual damascene technique

SAMSUNG ELECTRONICS CO LTD42 citations92

US6860277B2Mar 1, 2005

Single type of semiconductor wafer cleaning device

SAMSUNG ELECTRONICS CO LTD16 citations92

US6565736B2May 20, 2003

Wet process for semiconductor device fabrication using anode water containing oxidative substances and cathode water containing reductive substances, and anode water and cathode water used in the wet process

SAMSUNG ELECTRONICS CO LTD42 citations92

US6517412B2Feb 11, 2003

Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same

SAMSUNG ELECTRONICS CO LTD40 citations92

US7488235B2Feb 10, 2009

Polishing apparatus and related polishing methods

SAMSUNG ELECTRONICS CO LTD17 citations90

US7066785B2Jun 27, 2006

Polishing apparatus and related polishing methods

SAMSUNG ELECTRONICS CO LTD21 citations90

US6540935B2Apr 1, 2003

Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same

SAMSUNG ELECTRONICS CO LTD30 citations90

US6699749B1Mar 2, 2004

Method for manufacturing a metal-insulator-metal capacitor

SAMSUNG ELECTRONICS CO LTD19 citations86

US7196010B2Mar 27, 2007

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD16 citations84

US7183226B2Feb 27, 2007

Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same

SAMSUNG ELECTRONICS CO LTD8 citations74

US6506682B1Jan 14, 2003

Non-selective slurries for chemical mechanical polishing of metal layers and method for manufacturing thereof

SAMSUNG ELECTRONICS CO LTD10 citations74

US7237561B2Jul 3, 2007

Apparatus for cleaning semiconductor wafer including heating using a light source and method for cleaning wafer using the same

SAMSUNG ELECTRONICS CO LTD5 citations73

US7153370B2Dec 26, 2006

Method of cleaning semiconductor wafer

SAMSUNG ELECTRONICS CO LTD5 citations73

US6548388B2Apr 15, 2003

Semiconductor device including gate electrode having damascene structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations72

US6254767B1Jul 3, 2001

Semiconductor device manufacturing apparatus having controller detecting function of filter

SAMSUNG ELECTRONICS CO LTD10 citations69

US7144815B2Dec 5, 2006

Chemical mechanical polishing slurry

SAMSUNG ELECTRONICS CO LTD2 citations63

US7089947B2Aug 15, 2006

Apparatus and method for cleaning a semiconductor wafer

SAMSUNG ELECTRONICS CO LTD2 citations62

US7033944B2Apr 25, 2006

Dual damascene process

SAMSUNG ELECTRONICS CO LTD3 citations62

US7017597B2Mar 28, 2006

Megasonic cleaning apparatus for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations62

US6716732B2Apr 6, 2004

Method for fabricating a contact pad of semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations62

US6712078B2Mar 30, 2004

Apparatus for cleaning semiconductor wafer and method for cleaning wafer using the same

SAMSUNG ELECTRONICS CO LTD3 citations62

US6498102B2Dec 24, 2002

Method for planarizing a semiconductor device using ceria-based slurry

SAMSUNG ELECTRONICS CO LTD2 citations62

US6924234B2Aug 2, 2005

Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper

SAMSUNG ELECTRONICS CO LTD6 citations61

US7807337B2Oct 5, 2010

Inductor for a system-on-a-chip and a method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations57

US6518157B2Feb 11, 2003

Methods of planarizing insulating layers on regions having different etching rates

SAMSUNG ELECTRONICS CO LTD3 citations57

US7135413B2Nov 14, 2006

Cleaning solution for removing damaged portion of ferroelectric layer and cleaning method using the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US7026242B2Apr 11, 2006

Method for filling a hole with a metal

SAMSUNG ELECTRONICS CO LTD0 citations51

US7972874B2Jul 5, 2011

Semiconductor process evaluation methods including variable ion implanting conditions

SAMSUNG ELECTRONICS CO LTD0 citations46

US7781234B2Aug 24, 2010

Semiconductor process evaluation methods including variable ion implanting conditions

SAMSUNG ELECTRONICS CO LTD1 citations46

US6723644B2Apr 20, 2004

Method of fabricating a semiconductor device using two chemical mechanical polishing processes to polish regions having different conductive pattern densities

SAMSUNG ELECTRONICS CO LTD0 citations42

HAH SANG-ROK

Patents

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same

Method of forming metal interconnection using plating and semiconductor device manufactured by the method

Method of forming a via contact structure using a dual damascene technique

Single type of semiconductor wafer cleaning device

Wet process for semiconductor device fabrication using anode water containing oxidative substances and cathode water containing reductive substances, and anode water and cathode water used in the wet process

Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same

Polishing apparatus and related polishing methods

Polishing apparatus and related polishing methods

Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same

Method for manufacturing a metal-insulator-metal capacitor

Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same

Method of forming a trench for use in manufacturing a semiconductor device

Chemical mechanical polishing apparatus

Method of fabricating a metal-insulator-metal capacitor

Wafer cleaning system

Method and apparatus for supplying chemical-mechanical polishing slurries

Method of forming trench isolation regions

Method of forming metal interconnection layer of semiconductor device

Slurry composition for use in chemical mechanical polishing of metal wiring

Method of planarizing non-volatile memory device

Chemical mechanical polishing slurry

Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same

Non-selective slurries for chemical mechanical polishing of metal layers and method for manufacturing thereof

Apparatus for cleaning semiconductor wafer including heating using a light source and method for cleaning wafer using the same

Method of cleaning semiconductor wafer

Semiconductor device including gate electrode having damascene structure and method of fabricating the same

Semiconductor device manufacturing apparatus having controller detecting function of filter

Chemical mechanical polishing slurry

Apparatus and method for cleaning a semiconductor wafer

Dual damascene process

Megasonic cleaning apparatus for fabricating semiconductor device

Method for fabricating a contact pad of semiconductor device

Apparatus for cleaning semiconductor wafer and method for cleaning wafer using the same

Method for planarizing a semiconductor device using ceria-based slurry

Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper

Inductor for a system-on-a-chip and a method for manufacturing the same

Methods of planarizing insulating layers on regions having different etching rates

Cleaning solution for removing damaged portion of ferroelectric layer and cleaning method using the same

Method for filling a hole with a metal

Semiconductor process evaluation methods including variable ion implanting conditions

Semiconductor process evaluation methods including variable ion implanting conditions

Method of fabricating a semiconductor device using two chemical mechanical polishing processes to polish regions having different conductive pattern densities