Inventor
YOSHIDA TADANORI
JP17 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIDA TADANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
7 patentsUS6524927B1Feb 25, 2003
Semiconductor device and method of fabricating the same
HITACHI LTD17 citations91
US6632721B1Oct 14, 2003
Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains
HITACHI LTD13 citations84
US6403479B1Jun 11, 2002
Process for producing semiconductor and apparatus for production
HITACHI LTD17 citations81
US6870224B2Mar 22, 2005
MOS transistor apparatus and method of manufacturing same
HITACHI LTD5 citations73
US6656838B2Dec 2, 2003
Process for producing semiconductor and apparatus for production
HITACHI LTD11 citations71
US6444405B1Sep 3, 2002
Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate
HITACHI LTD3 citations60
US6905928B2Jun 14, 2005
MOS transistor apparatus and method of manufacturing same
HITACHI LTD1 citations51
HITACHI ULSI SYS CO LTD
4 patentsUS7190031B2Mar 13, 2007
Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
HITACHI ULSI SYS CO LTD18 citations92
US6770528B2Aug 3, 2004
Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate
HITACHI ULSI SYS CO LTD23 citations90
US7972920B2Jul 5, 2011
Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
HITACHI ULSI SYS CO LTD7 citations84
US7161215B2Jan 9, 2007
Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
HITACHI ULSI SYS CO LTD3 citations63
RENESAS TECH CORP
3 patentsUS6717202B2Apr 6, 2004
HSG semiconductor capacitor with migration inhibition layer
RENESAS TECH CORP15 citations82
US7701020B2Apr 20, 2010
Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
RENESAS TECH CORP5 citations74
US7495289B2Feb 24, 2009
Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
RENESAS TECH CORP4 citations74