Inventor
NING XIAN J
US36 patents
⚠️ This page may combine multiple inventors who share the name “NING XIAN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
16 patentsUS6709874B2Mar 23, 2004
Method of manufacturing a metal cap layer for preventing damascene conductive lines from oxidation
INFINEON TECHNOLOGIES AG74 citations98
US6692898B2Feb 17, 2004
Self-aligned conductive line for cross-point magnetic memory integrated circuits
INFINEON TECHNOLOGIES AG91 citations98
US6611453B2Aug 26, 2003
Self-aligned cross-point MRAM device with aluminum metallization layers
INFINEON TECHNOLOGIES AG122 citations98
US6794262B2Sep 21, 2004
MIM capacitor structures and fabrication methods in dual-damascene structures
INFINEON TECHNOLOGIES AG66 citations96
US6620701B2Sep 16, 2003
Method of fabricating a metal-insulator-metal (MIM) capacitor
INFINEON TECHNOLOGIES AG56 citations96
US6451667B1Sep 17, 2002
Self-aligned double-sided vertical MIMcap
INFINEON TECHNOLOGIES AG66 citations96
US6979526B2Dec 27, 2005
Lithography alignment and overlay measurement marks formed by resist mask blocking for MRAMs
INFINEON TECHNOLOGIES AG39 citations92
US6858441B2Feb 22, 2005
MRAM MTJ stack to conductive line alignment method
INFINEON TECHNOLOGIES AG37 citations92
US6815248B2Nov 9, 2004
Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
INFINEON TECHNOLOGIES AG32 citations92
US6780775B2Aug 24, 2004
Design of lithography alignment and overlay measurement marks on CMP finished damascene surface
INFINEON TECHNOLOGIES AG28 citations92
US6706588B1Mar 16, 2004
Method of fabricating an integrated circuit having embedded vertical capacitor
INFINEON TECHNOLOGIES AG24 citations92
US6960365B2Nov 1, 2005
Vertical MIMCap manufacturing method
INFINEON TECHNOLOGIES AG8 citations74
US6635496B2Oct 21, 2003
Plate-through hard mask for MRAM devices
INFINEON TECHNOLOGIES AG7 citations74
US6750115B1Jun 15, 2004
Method for generating alignment marks for manufacturing MIM capacitors
INFINEON TECHNOLOGIES AG9 citations72
US6677635B2Jan 13, 2004
Stacked MIMCap between Cu dual damascene levels
INFINEON TECHNOLOGIES AG11 citations70
US6713395B2Mar 30, 2004
Single RIE process for MIMcap top and bottom plates
INFINEON TECHNOLOGIES AG3 citations63
SEMICONDUCTOR MFG INT SHANGHAI
10 patentsUS7820500B2Oct 26, 2010
Single mask scheme method and structure for integrating PMOS and NMOS transistors using strained silicon
SEMICONDUCTOR MFG INT SHANGHAI12 citations84
US7709336B2May 4, 2010
Metal hard mask method and structure for strained silicon MOS transistors
SEMICONDUCTOR MFG INT SHANGHAI8 citations84
US7591659B2Sep 22, 2009
Method and structure for second spacer formation for strained silicon MOS transistors
SEMICONDUCTOR MFG INT SHANGHAI9 citations84
US7547595B2Jun 16, 2009
Integration scheme method and structure for transistors using strained silicon
SEMICONDUCTOR MFG INT SHANGHAI13 citations84
US7425488B2Sep 16, 2008
Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors
SEMICONDUCTOR MFG INT SHANGHAI12 citations84
US7605470B2Oct 20, 2009
Dummy patterns and method of manufacture for mechanical strength of low K dielectric materials in copper interconnect structures for semiconductor devices
SEMICONDUCTOR MFG INT SHANGHAI3 citations63
US7479699B2Jan 20, 2009
Seal ring structures with unlanded via stacks
SEMICONDUCTOR MFG INT SHANGHAI2 citations63
US7335566B2Feb 26, 2008
Polysilicon gate doping method and structure for strained silicon MOS transistors
SEMICONDUCTOR MFG INT SHANGHAI4 citations61
US8049308B2Nov 1, 2011
Bond pad for low K dielectric materials and method for manufacture for semiconductor devices
SEMICONDUCTOR MFG INT SHANGHAI0 citations52
US7663159B2Feb 16, 2010
Seal ring corner design
SEMICONDUCTOR MFG INT SHANGHAI0 citations42
SIEMENS AG
3 patentsINFINEON TECHNOLOGIES CORP
2 patentsNING XIAN J
2 patentsUS8158520B2Apr 17, 2012
Method of forming a via structure dual damascene structure for the manufacture of semiconductor integrated circuit devices
NING XIAN J3 citations59
US8395240B2Mar 12, 2013
Bond pad for low K dielectric materials and method for manufacture for semiconductor devices
NING XIAN J0 citations48