Inventor
TANG DENNY
US36 patents
⚠️ This page may combine multiple inventors who share the name “TANG DENNY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
30 patentsUS7229883B2Jun 12, 2007
Phase change memory device and method of manufacture thereof
TAIWAN SEMICONDUCTOR MFG88 citations98
US7573736B2Aug 11, 2009
Spin torque transfer MRAM device
TAIWAN SEMICONDUCTOR MFG47 citations96
US7286429B1Oct 23, 2007
High speed sensing amplifier for an MRAM cell
TAIWAN SEMICONDUCTOR MFG45 citations93
US7579612B2Aug 25, 2009
Resistive memory device having enhanced resist ratio and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG34 citations92
US7545662B2Jun 9, 2009
Method and system for magnetic shielding in semiconductor integrated circuit
TAIWAN SEMICONDUCTOR MFG31 citations92
US7349243B2Mar 25, 2008
3-parameter switching technique for use in MRAM memory arrays
TAIWAN SEMICONDUCTOR MFG37 citations92
US7154798B2Dec 26, 2006
MRAM arrays and methods for writing and reading magnetic memory devices
TAIWAN SEMICONDUCTOR MFG38 citations92
US7050290B2May 23, 2006
Integrated capacitor
TAIWAN SEMICONDUCTOR MFG21 citations92
US6711053B1Mar 23, 2004
Scaleable high performance magnetic random access memory cell and array
TAIWAN SEMICONDUCTOR MFG28 citations92
US6606263B1Aug 12, 2003
Non-disturbing programming scheme for magnetic RAM
TAIWAN SEMICONDUCTOR MFG48 citations92
US7436698B2Oct 14, 2008
MRAM arrays and methods for writing and reading magnetic memory devices
TAIWAN SEMICONDUCTOR MFG41 citations90
US7719882B2May 18, 2010
Advanced MRAM design
TAIWAN SEMICONDUCTOR MFG10 citations84
US7183617B2Feb 27, 2007
Magnetic shielding for magnetically sensitive semiconductor devices
TAIWAN SEMICONDUCTOR MFG19 citations84
US6778433B1Aug 17, 2004
High programming efficiency MRAM cell structure
TAIWAN SEMICONDUCTOR MFG16 citations84
US7471539B2Dec 30, 2008
High current interconnect structure for IC memory device programming
TAIWAN SEMICONDUCTOR MFG17 citations82
US7105879B2Sep 12, 2006
Write line design in MRAM
TAIWAN SEMICONDUCTOR MFG7 citations74
US7035083B2Apr 25, 2006
Interdigitated capacitor and method for fabrication thereof
TAIWAN SEMICONDUCTOR MFG10 citations74
US6873535B1Mar 29, 2005
Multiple width and/or thickness write line in MRAM
TAIWAN SEMICONDUCTOR MFG8 citations74
US7667247B2Feb 23, 2010
Method for passivating gate dielectric films
TAIWAN SEMICONDUCTOR MFG7 citations73
US7265373B2Sep 4, 2007
Phase change memory device and method of manufacturing
TAIWAN SEMICONDUCTOR MFG9 citations73
US7443638B2Oct 28, 2008
Magnetoresistive structures and fabrication methods
TAIWAN SEMICONDUCTOR MFG5 citations63
US7312506B2Dec 25, 2007
Memory cell structure
TAIWAN SEMICONDUCTOR MFG4 citations63
US7622358B2Nov 24, 2009
Semiconductor device with semi-insulating substrate portions and method for forming the same
TAIWAN SEMICONDUCTOR MFG2 citations62
US7071478B2Jul 4, 2006
System and method for passing particles on selected areas on a wafer
TAIWAN SEMICONDUCTOR MFG4 citations61
US7466585B2Dec 16, 2008
Magnetic random access memory
TAIWAN SEMICONDUCTOR MFG2 citations58
US7858980B2Dec 28, 2010
Reduced active area in a phase change memory structure
TAIWAN SEMICONDUCTOR MFG0 citations52
US7599215B2Oct 6, 2009
Magnetoresistive random access memory device with small-angle toggle write lines
TAIWAN SEMICONDUCTOR MFG1 citations52
US7417524B2Aug 26, 2008
Magnetic-bias ferromagnetic spiral inductor
TAIWAN SEMICONDUCTOR MFG0 citations52
US7151271B2Dec 19, 2006
System and method for passing high energy particles through a mask
TAIWAN SEMICONDUCTOR MFG1 citations52
US7964900B2Jun 21, 2011
Semiconductor device with semi-insulating substrate portions
TAIWAN SEMICONDUCTOR MFG0 citations51