Inventor
TRACY CLARENCE J
US24 patents
⚠️ This page may combine multiple inventors who share the name “TRACY CLARENCE J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
11 patentsUS5902690AMay 11, 1999
Stray magnetic shielding for a non-volatile MRAM
MOTOROLA INC149 citations99
US5861328AJan 19, 1999
Method of fabricating GMR devices
MOTOROLA INC227 citations99
US5149674ASep 22, 1992
Method for making a planar multi-layer metal bonding pad
MOTOROLA INC78 citations95
US4201579AMay 6, 1980
Method for removing photoresist by hydrogen plasma
MOTOROLA INC72 citations95
US4970176ANov 13, 1990
Multiple step metallization process
MOTOROLA INC98 citations94
US5287002AFeb 15, 1994
Planar multi-layer metal bonding pad
MOTOROLA INC28 citations92
US4717446AJan 5, 1988
Method of detecting the endpoint of the etch of epitaxially grown silicon
MOTOROLA INC36 citations90
US4340456AJul 20, 1982
Method for detecting the end point of a plasma etching reaction
MOTOROLA INC20 citations81
US6518070B1Feb 11, 2003
Process of forming a semiconductor device and a semiconductor device
MOTOROLA INC14 citations80
US5554889ASep 10, 1996
Structure and method for metallization of semiconductor devices
MOTOROLA INC11 citations70
US5700721ADec 23, 1997
Structure and method for metallization of semiconductor devices
MOTOROLA INC2 citations58
FREESCALE SEMICONDUCTOR INC
11 patentsUS6784510B1Aug 31, 2004
Magnetoresistive random access memory device structures
FREESCALE SEMICONDUCTOR INC44 citations96
US6911156B2Jun 28, 2005
Methods for fabricating MRAM device structures
FREESCALE SEMICONDUCTOR INC28 citations92
US6798004B1Sep 28, 2004
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC16 citations92
US6881351B2Apr 19, 2005
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
FREESCALE SEMICONDUCTOR INC27 citations91
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US7241691B2Jul 10, 2007
Conducting metal oxide with additive as p-MOS device electrode
FREESCALE SEMICONDUCTOR INC8 citations74
US6890770B2May 10, 2005
Magnetoresistive random access memory device structures and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC10 citations73
US6806127B2Oct 19, 2004
Method and structure for contacting an overlying electrode for a magnetoelectronics element
FREESCALE SEMICONDUCTOR INC9 citations73
US7169622B2Jan 30, 2007
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC4 citations63
US7736996B2Jun 15, 2010
Method for damage avoidance in transferring an ultra-thin layer of crystalline material with high crystalline quality
FREESCALE SEMICONDUCTOR INC6 citations59
US7042025B2May 9, 2006
Method and structure for contacting an overlying electrode for a magnetoelectronics element
FREESCALE SEMICONDUCTOR INC1 citations52