P

Inventor

ASPAR BERNARD

FR75 patents
⚠️ This page may combine multiple inventors who share the name “ASPAR BERNARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

38 patents
US7067396B2Jun 27, 2006

Method of producing a thin layer of semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE309 citations99
US6946365B2Sep 20, 2005

Method for producing a thin film comprising introduction of gaseous species

COMMISSARIAT ENERGIE ATOMIQUE163 citations99
US6809009B2Oct 26, 2004

Method of producing a thin layer of semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE363 citations99
US6809044B1Oct 26, 2004

Method for making a thin film using pressurization

COMMISSARIAT ENERGIE ATOMIQUE184 citations99
US6756286B1Jun 29, 2004

Method for transferring a thin film comprising a step of generating inclusions

COMMISSARIAT ENERGIE ATOMIQUE263 citations99
US6335258B1Jan 1, 2002

Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element

COMMISSARIAT ENERGIE ATOMIQUE174 citations99
US6303468B1Oct 16, 2001

Method for making a thin film of solid material

COMMISSARIAT ENERGIE ATOMIQUE271 citations99
US6225192B1May 1, 2001

Method of producing a thin layer of semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE234 citations99
US6190998B1Feb 20, 2001

Method for achieving a thin film of solid material and applications of this method

COMMISSARIAT ENERGIE ATOMIQUE185 citations99
US6020252AFeb 1, 2000

Method of producing a thin layer of semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE619 citations99
US6204079B1Mar 20, 2001

Selective transfer of elements from one support to another support

COMMISSARIAT ENERGIE ATOMIQUE120 citations98
US6103597AAug 15, 2000

Method of obtaining a thin film of semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE399 citations98
US6403450B1Jun 11, 2002

Heat treatment method for semiconductor substrates

COMMISSARIAT ENERGIE ATOMIQUE101 citations97
US7498234B2Mar 3, 2009

Method of producing a thin layer of semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE34 citations96
US6974759B2Dec 13, 2005

Method for making a stacked comprising a thin film adhering to a target substrate

COMMISSARIAT ENERGIE ATOMIQUE46 citations96
US6316333B1Nov 13, 2001

Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation

COMMISSARIAT ENERGIE ATOMIQUE76 citations96
US6756285B1Jun 29, 2004

Multilayer structure with controlled internal stresses and making same

COMMISSARIAT ENERGIE ATOMIQUE86 citations95
US6465327B1Oct 15, 2002

Method for producing a thin membrane and resulting structure with membrane

COMMISSARIAT ENERGIE ATOMIQUE61 citations95
US7902038B2Mar 8, 2011

Detachable substrate with controlled mechanical strength and method of producing same

COMMISSARIAT ENERGIE ATOMIQUE50 citations94
US7713369B2May 11, 2010

Detachable substrate or detachable structure and method for the production thereof

COMMISSARIAT ENERGIE ATOMIQUE48 citations94
US7883994B2Feb 8, 2011

Process for the transfer of a thin film

COMMISSARIAT ENERGIE ATOMIQUE21 citations93
US7229899B2Jun 12, 2007

Process for the transfer of a thin film

COMMISSARIAT ENERGIE ATOMIQUE25 citations93
US6808967B1Oct 26, 2004

Method for producing a buried layer of material in another material

COMMISSARIAT ENERGIE ATOMIQUE23 citations93
US6429094B1Aug 6, 2002

Treatment process for molecular bonding and unbonding of two structures

COMMISSARIAT ENERGIE ATOMIQUE37 citations93
US7498245B2Mar 3, 2009

Embrittled substrate and method for making same

COMMISSARIAT ENERGIE ATOMIQUE25 citations92
US7494897B2Feb 24, 2009

Method of producing mixed substrates and structure thus obtained

COMMISSARIAT ENERGIE ATOMIQUE29 citations92
US6197695B1Mar 6, 2001

Process for the manufacture of passive and active components on the same insulating substrate

COMMISSARIAT ENERGIE ATOMIQUE51 citations92
US6821376B1Nov 23, 2004

Method for separating two elements and a device therefor

COMMISSARIAT ENERGIE ATOMIQUE50 citations91
US7029548B2Apr 18, 2006

Method for cutting a block of material and forming a thin film

COMMISSARIAT ENERGIE ATOMIQUE28 citations90
US6959863B2Nov 1, 2005

Method for selectively transferring at least an element from an initial support onto a final support

COMMISSARIAT ENERGIE ATOMIQUE26 citations88
US8679946B2Mar 25, 2014

Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate

COMMISSARIAT ENERGIE ATOMIQUE5 citations84
US8609514B2Dec 17, 2013

Process for the transfer of a thin film comprising an inclusion creation step

COMMISSARIAT ENERGIE ATOMIQUE6 citations84
US7615463B2Nov 10, 2009

Method for making thin layers containing microcomponents

COMMISSARIAT ENERGIE ATOMIQUE19 citations82
US7060590B2Jun 13, 2006

Layer transfer method

COMMISSARIAT ENERGIE ATOMIQUE18 citations82
US7238598B2Jul 3, 2007

Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element

COMMISSARIAT ENERGIE ATOMIQUE14 citations79
US7264996B2Sep 4, 2007

Method for separating wafers bonded together to form a stacked structure

COMMISSARIAT ENERGIE ATOMIQUE7 citations74
US7258743B2Aug 21, 2007

Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure

COMMISSARIAT ENERGIE ATOMIQUE9 citations74
US6939782B2Sep 6, 2005

Method for producing thin layers on a specific support and an application thereof

COMMISSARIAT ENERGIE ATOMIQUE7 citations74

SOITEC SILICON ON INSULATOR

5 patents

COMMISSARIAT A L ATOMIQUE

1 patent

COMMISARIAT L EN ATOMIQUE

1 patent

MORICEAU HUBERT

1 patent

ASPAR BERNARD

1 patent

E2V SEMICONDUCTORS

1 patent

ZUSSY MARC

1 patent

LAGAHE CHRYSTELLE

1 patent

Showing the top 50 of 75 patents by PatentIndex Score.