Inventor · disambiguated record
Ming Sang Kwan
Also filed as: KWAN MING · KWAN MING S · KWAN MING SANG
42 granted patents·1 pending application·381 citations·filing 1993–2020
98Inventor score
Files withSPANSION LLC12ADVANCED MICRO DEVICES INC8HYUNDAI ELECTRONICS AMERICA6CYPRESS SEMICONDUCTOR CORP5ADESTO TECH CORP3
Top patents by PatentIndex Score
43 records- 0191US10038004B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 31, 2018·5 cites·17 claims
- 0290US10361215B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Jul 23, 2019·4 cites·18 claims
- 0389US7385851B1Repetitive erase verify technique for flash memory devicesSPANSION LLC·Filed 2006·Granted Jun 10, 2008·25 cites·23 claims
- 0488US6366499B1Method of operating flash memoryHYUNDAI ELECTRONICS AMERICA·Filed 2000·Granted Apr 2, 2002·28 cites·20 claims
- 0585US6525970B2Erase method for flash memoryHYUNDAI ELECTRONICS AMERICA·Filed 2001·Granted Feb 25, 2003·21 cites·26 claims
- 0684US9524777B1Dual program state cycling algorithms for resistive switching memory deviceADESTO TECH CORP·Filed 2016·Granted Dec 20, 2016·7 cites·20 claims
- 0784US7319615B1Ramp gate erase for dual bit flash memorySPANSION LLC·Filed 2006·Granted Jan 15, 2008·17 cites·15 claims
- 0883US10566341B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Feb 18, 2020·3 cites·12 claims
- 0983US9437815B1Resistive switching memory device architecture for reduced cell damage during processingADESTO TECH CORP·Filed 2014·Granted Sep 6, 2016·6 cites·10 claims
- 1083US7679967B2Controlling AC disturbance while programmingSPANSION LLC·Filed 2007·Granted Mar 16, 2010·10 cites·23 claims
- 1182US6347054B1Method of operating flash memoryHYUNDAI ELECTRONICS AMERICA·Filed 2000·Granted Feb 12, 2002·17 cites·21 claims
- 1281US6330190B1Semiconductor structure for flash memory enabling low operating potentialsHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Dec 11, 2001·32 cites·20 claims
- 1378US6043123ATriple well flash memory fabrication processHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Mar 28, 2000·38 cites·2 claims
- 1476US7750407B2Strapping contact for charge protectionSPANSION LLC·Filed 2006·Granted Jul 6, 2010·4 cites·20 claims
- 1575US7079424B1Methods and systems for reducing erase times in flash memory devicesSPANSION L L C·Filed 2004·Granted Jul 18, 2006·24 cites·18 claims
- 1674US7713875B2Variable salicide block for resistance equalization in an arraySPANSION LLC·Filed 2007·Granted May 11, 2010·6 cites·16 claims
- 1773US11069699B2NAND memory cell string having a stacked select gate structure and process for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Jul 20, 2021·0 cites·13 claims
- 1872US10756101B2NAND memory cell string having a stacked select gate structure and process for for forming sameCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Aug 25, 2020·0 cites·20 claims
- 1972US6894925B1Flash memory cell programming method and systemADVANCED MICRO DEVICES INC·Filed 2003·Granted May 17, 2005·17 cites·20 claims
- 2071US9530495B1Resistive switching memory having a resistor, diode, and switch memory cellADESTO TECH CORP·Filed 2015·Granted Dec 27, 2016·3 cites·20 claims
- 2169US7154141B2Source side programmingHYUNDAI ELECTRONICS AMERICA·Filed 2001·Granted Dec 26, 2006·16 cites·20 claims
- 2268US6747900B1Memory circuit arrangement for programming a memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 8, 2004·16 cites·20 claims
- 2367US9368206B1Capacitor arrangements using a resistive switching memory cell structureADESTO TECHNOLOGIES CORP·Filed 2014·Granted Jun 14, 2016·3 cites·16 claims
- 2466US7599228B1Flash memory device having increased over-erase correction efficiency and robustness against device variationsSPANSION L L C·Filed 2004·Granted Oct 6, 2009·14 cites·18 claims
- 2566US7561471B2Cycling improvement using higher erase biasSPANSION LLC·Filed 2007·Granted Jul 14, 2009·6 cites·34 claims
- 2666US5521867AAdjustable threshold voltage conversion circuitADVANCED MICRO DEVICES INC·Filed 1993·Granted May 28, 1996·25 cites·34 claims
- 2765US7977218B2Thin oxide dummy tiling as charge protectionSPANSION LLC·Filed 2006·Granted Jul 12, 2011·3 cites·20 claims
- 2863US8264898B2Controlling AC disturbance while programmingCHUNG SUNG-YONG·Filed 2011·Granted Sep 11, 2012·2 cites·20 claims
- 2962US7553727B2Using implanted poly-1 to improve charging protection in dual-poly processSPANSION LLC·Filed 2007·Granted Jun 30, 2009·2 cites·15 claims
- 3057US7986562B2Controlling AC disturbance while programmingSPANSION LLC·Filed 2009·Granted Jul 26, 2011·2 cites·12 claims
- 3156US7626869B2Multi-phase wordline erasing for flash memorySPANSION LLC·Filed 2007·Granted Dec 1, 2009·3 cites·20 claims
- 3255US6765827B1Method and system for detecting defective material surrounding flash memory cellsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·6 cites·18 claims
- 3347US8404541B2Strapping contact for charge protectionZHENG WEI·Filed 2010·Granted Mar 26, 2013·0 cites·20 claims
- 3446US2010322006A1Nand memory cell string having a stacked select gate structure and process for for forming sameKWAN MING SANG·Filed 2009·Application pending·0 cites
- 3545US9171936B2Barrier region underlying source/drain regions for dual-bit memory devicesSINHA SHANKAR·Filed 2006·Granted Oct 27, 2015·0 cites·14 claims
- 3643US8559255B2Controlling AC disturbance while programmingCHUNG SUNG-YONG·Filed 2012·Granted Oct 15, 2013·0 cites·20 claims
- 3743US7888218B2Using thick spacer for bitline implant then removeSPANSION LLC·Filed 2007·Granted Feb 15, 2011·0 cites·13 claims
- 3843US7671405B2Deep bitline implant to avoid program disturbSPANSION LLC·Filed 2006·Granted Mar 2, 2010·0 cites·22 claims
- 3943US5652155AMethod for making semiconductor circuit including non-ESD transistors with reduced degradation due to an impurity implantADVANCED MICRO DEVICES INC·Filed 1995·Granted Jul 29, 1997·8 cites·15 claims
- 4038US10181496B1Programmable impedance memory device and related methodsADESTO TECHNOLOGIES CORP·Filed 2016·Granted Jan 15, 2019·0 cites·9 claims
- 4138US5596531AMethod for decreasing the discharge time of a flash EPROM cellADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 21, 1997·5 cites·14 claims
- 4233US5882985AReduction of field oxide step height during semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 16, 1999·3 cites·15 claims
- 4330US5981994AMethod and semiconductor circuit for maintaining integrity of field threshold voltage requirementsADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 9, 1999·0 cites·15 claims
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