Inventor
NEJAD HASAN
US35 patents
⚠️ This page may combine multiple inventors who share the name “NEJAD HASAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
32 patentsUS6882553B2Apr 19, 2005
Stacked columnar resistive memory structure and its method of formation and operation
MICRON TECHNOLOGY INC89 citations99
US6882566B2Apr 19, 2005
Stacked 1T-nMTJ MRAM structure
MICRON TECHNOLOGY INC142 citations99
US7339811B2Mar 4, 2008
Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation
MICRON TECHNOLOGY INC71 citations98
US7023743B2Apr 4, 2006
Stacked columnar 1T-nMTJ structure and its method of formation and operation
MICRON TECHNOLOGY INC68 citations98
US7214621B2May 8, 2007
Methods of forming devices associated with semiconductor constructions
MICRON TECHNOLOGY INC79 citations97
US6940748B2Sep 6, 2005
Stacked 1T-nMTJ MRAM structure
MICRON TECHNOLOGY INC37 citations96
US7440339B2Oct 21, 2008
Stacked columnar 1T-nMTj MRAM structure and its method of formation and operation
MICRON TECHNOLOGY INC13 citations93
US7339812B2Mar 4, 2008
Stacked 1T-nmemory cell structure
MICRON TECHNOLOGY INC21 citations93
US7306954B2Dec 11, 2007
Process flow for building MRAM structures
MICRON TECHNOLOGY INC17 citations93
US7209378B2Apr 24, 2007
Columnar 1T-N memory cell structure
MICRON TECHNOLOGY INC23 citations93
US7042749B2May 9, 2006
Stacked 1T-nmemory cell structure
MICRON TECHNOLOGY INC22 citations93
US6879516B2Apr 12, 2005
Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation
MICRON TECHNOLOGY INC26 citations93
US6828639B2Dec 7, 2004
Process flow for building MRAM structures
MICRON TECHNOLOGY INC23 citations93
US6716644B2Apr 6, 2004
Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
MICRON TECHNOLOGY INC29 citations93
US6933224B2Aug 23, 2005
Method of fabricating integrated circuitry
MICRON TECHNOLOGY INC15 citations92
US6735111B2May 11, 2004
Magnetoresistive memory devices and assemblies
MICRON TECHNOLOGY INC17 citations92
US7989251B2Aug 2, 2011
Variable resistance memory device having reduced bottom contact area and method of forming the same
MICRON TECHNOLOGY INC11 citations84
US7547559B2Jun 16, 2009
Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
MICRON TECHNOLOGY INC6 citations74
US7387959B2Jun 17, 2008
Method of fabricating integrated circuitry
MICRON TECHNOLOGY INC5 citations74
US7330367B2Feb 12, 2008
Stacked 1T-nMTJ MRAM structure
MICRON TECHNOLOGY INC5 citations74
US7183621B2Feb 27, 2007
MRAM memory cell having an electroplated bottom layer
MICRON TECHNOLOGY INC6 citations74
US7038286B2May 2, 2006
Magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC6 citations74
US6780653B2Aug 24, 2004
Methods of forming magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC6 citations74
US6781174B2Aug 24, 2004
Magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC5 citations74
US7977236B2Jul 12, 2011
Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit
MICRON TECHNOLOGY INC5 citations73
US7557032B2Jul 7, 2009
Silicided recessed silicon
MICRON TECHNOLOGY INC6 citations73
US7978491B2Jul 12, 2011
Stacked memory cell structure and method of forming such a structure
MICRON TECHNOLOGY INC3 citations63
US7932173B2Apr 26, 2011
Method of fabricating integrated circuitry
MICRON TECHNOLOGY INC3 citations63
US6791870B2Sep 14, 2004
Magnetoresistive memory devices and assemblies; and methods of storing and retrieving information
MICRON TECHNOLOGY INC4 citations63
US6780654B2Aug 24, 2004
Methods of forming magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC3 citations63
US8354661B2Jan 15, 2013
Variable resistance memory device having reduced bottom contact area and method of forming the same
MICRON TECHNOLOGY INC0 citations52
US7279762B2Oct 9, 2007
Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC0 citations52
NEJAD HASAN
3 patentsUS8592797B2Nov 26, 2013
Variable resistance memory device having reduced bottom contact area and method of forming the same
NEJAD HASAN1 citations61
US8426305B2Apr 23, 2013
Method of fabricating integrated circuitry
NEJAD HASAN1 citations61
US9076888B2Jul 7, 2015
Silicided recessed silicon
NEJAD HASAN1 citations60