Inventor

KESAN VIJAY P

US5 patents

⚠️ This page may combine multiple inventors who share the name “KESAN VIJAY P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

4 patents

US5525828AJun 11, 1996

High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields

IBM138 citations95

US5268324ADec 7, 1993

UNIV TEXAS

1 patent

US5034604AJul 23, 1991

Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction

UNIV TEXAS46 citations86

KESAN VIJAY P

IBM

High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields

Modified silicon CMOS process having selectively deposited Si/SiGe FETS

Immersion scanning system for fabricating porous silicon films

Apparatus for producing porous silicon on a substrate

UNIV TEXAS

Refractory effusion cell to generate a reproducible, uniform and ultra-pure molecular beam of elemental molecules, utilizing reduced thermal gradient filament construction