Inventor

WON DAE-JOONG

KR4 patents

⚠️ This page may combine multiple inventors who share the name “WON DAE-JOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

2 patents

US7534708B2May 19, 2009

Recessed-type field effect transistor with reduced body effect

SAMSUNG ELECTRONICS CO LTD2 citations61

US7300845B2Nov 27, 2007

Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure

SAMSUNG ELECTRONICS CO LTD3 citations61

WON DAE-JOONG

2 patents

US8124512B2Feb 28, 2012

Methods of forming integrated circuit devices having different gate electrode cross sections

WON DAE-JOONG2 citations52

US8710594B2Apr 29, 2014

Integrated circuit devices having conductive structures with different cross sections

WON DAE-JOONG0 citations41