Inventor
LAI YU-ANN
TW2 patents
Patents
2 patentsUS12163995B2Dec 10, 2024
GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11680978B2Jun 20, 2023
GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations56