Inventor
MIN BYOUNG W
US29 patents
⚠️ This page may combine multiple inventors who share the name “MIN BYOUNG W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
19 patentsUS7013447B2Mar 14, 2006
Method for converting a planar transistor design to a vertical double gate transistor design
FREESCALE SEMICONDUCTOR INC63 citations98
US6838332B1Jan 4, 2005
Method for forming a semiconductor device having electrical contact from opposite sides
FREESCALE SEMICONDUCTOR INC45 citations95
US8901632B1Dec 2, 2014
Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
FREESCALE SEMICONDUCTOR INC40 citations94
US7754560B2Jul 13, 2010
Integrated circuit using FinFETs and having a static random access memory (SRAM)
FREESCALE SEMICONDUCTOR INC27 citations92
US7709303B2May 4, 2010
Process for forming an electronic device including a fin-type structure
FREESCALE SEMICONDUCTOR INC24 citations92
US7410876B1Aug 12, 2008
Methodology to reduce SOI floating-body effect
FREESCALE SEMICONDUCTOR INC31 citations92
US6921961B2Jul 26, 2005
Semiconductor device having electrical contact from opposite sides including a via with an end formed at a bottom surface of the diffusion region
FREESCALE SEMICONDUCTOR INC28 citations92
US7041576B2May 9, 2006
Separately strained N-channel and P-channel transistors
FREESCALE SEMICONDUCTOR INC37 citations89
US7452768B2Nov 18, 2008
Multiple device types including an inverted-T channel transistor and method therefor
FREESCALE SEMICONDUCTOR INC14 citations84
US7820530B2Oct 26, 2010
Efficient body contact field effect transistor with reduced body resistance
FREESCALE SEMICONDUCTOR INC15 citations83
US7648884B2Jan 19, 2010
Semiconductor device with integrated resistive element and method of making
FREESCALE SEMICONDUCTOR INC9 citations82
US7186596B2Mar 6, 2007
Vertical diode formation in SOI application
FREESCALE SEMICONDUCTOR INC13 citations81
US7144784B2Dec 5, 2006
Method of forming a semiconductor device and structure thereof
FREESCALE SEMICONDUCTOR INC9 citations73
US7122421B2Oct 17, 2006
Semiconductor device including a transistor and a capacitor having an aligned transistor and capacitive element
FREESCALE SEMICONDUCTOR INC6 citations73
US7927934B2Apr 19, 2011
SOI semiconductor device with body contact and method thereof
FREESCALE SEMICONDUCTOR INC4 citations62
US7517742B2Apr 14, 2009
Area diode formation in SOI application
FREESCALE SEMICONDUCTOR INC2 citations60
US9299856B2Mar 29, 2016
Selective gate oxide properties adjustment using fluorine
FREESCALE SEMICONDUCTOR INC0 citations52
US6844224B2Jan 18, 2005
Substrate contact in SOI and method therefor
FREESCALE SEMICONDUCTOR INC1 citations52
US7858505B2Dec 28, 2010
Method of forming a transistor having multiple types of Schottky junctions
FREESCALE SEMICONDUCTOR INC0 citations42