Inventor
DONATON RICARDO A
US20 patents
⚠️ This page may combine multiple inventors who share the name “DONATON RICARDO A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
15 patentsUS7791144B2Sep 7, 2010
High performance stress-enhance MOSFET and method of manufacture
IBM28 citations92
US7863123B2Jan 4, 2011
Direct contact between high-κ/metal gate and wiring process flow
IBM8 citations84
US7608489B2Oct 27, 2009
High performance stress-enhance MOSFET and method of manufacture
IBM12 citations84
US7560326B2Jul 14, 2009
Silicon/silcion germaninum/silicon body device with embedded carbon dopant
IBM18 citations84
US7498271B1Mar 3, 2009
Nitrogen based plasma process for metal gate MOS device
IBM10 citations84
US8349729B2Jan 8, 2013
Hybrid bonding interface for 3-dimensional chip integration
IBM6 citations82
US7709910B2May 4, 2010
Semiconductor structure for low parasitic gate capacitance
IBM8 citations81
US7875511B2Jan 25, 2011
CMOS structure including differential channel stressing layer compositions
IBM9 citations79
US10037998B2Jul 31, 2018
Semiconductor structures with deep trench capacitor and methods of manufacture
IBM4 citations72
US9679917B2Jun 13, 2017
Semiconductor structures with deep trench capacitor and methods of manufacture
IBM2 citations72
US7615418B2Nov 10, 2009
High performance stress-enhance MOSFET and method of manufacture
IBM4 citations63
US9653535B2May 16, 2017
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
IBM0 citations52
US9496329B2Nov 15, 2016
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
IBM0 citations52
US9299766B2Mar 29, 2016
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
IBM0 citations52
US10707217B2Jul 7, 2020
Semiconductor structures with deep trench capacitor and methods of manufacture
IBM0 citations51