Inventor

WANG XINHUI

US104 patents

⚠️ This page may combine multiple inventors who share the name “WANG XINHUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG XINHUI

IBM

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

finFETS and methods of making same

Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture

Thin box metal backgate extremely thin SOI device

Structure and method of fabricating FinFET

Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement

Uniform finFET gate height

FinFET with longitudinal stress in a channel

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Semiconductor structures including an integrated FinFET with deep trench capacitor and methods of manufacture

Semiconductor structures with deep trench capacitor and methods of manufacture

Semiconductor structures with deep trench capacitor and methods of manufacture

Semiconductor structures with deep trench capacitor and methods of manufacture

Process variability tolerant hard mask for replacement metal gate finFET devices

3D transistor channel mobility enhancement

Dual epitaxial integration for FinFETS

Semiconductor structures with deep trench capacitor and methods of manufacture

Asymmetric epitaxy and application thereof

3D transistor channel mobility enhancement

Method for detecting CMP endpoint in acidic slurries

Semiconductor structures with deep trench capacitor and methods of manufacture

Semiconductor structures with deep trench capacitor and methods of manufacture

ZTE CORP

Method and apparatus for information reporting, and method and apparatus for information transmission

Method and apparatus for configuring reference signal channel characteristics, and communication device

Signaling sending method and device, and signaling receiving method and device

Method and apparatus for information reporting, and method and apparatus for information transmission

System and method for allocating resources

Signaling sending method and device, and signaling receiving method and device

Method and apparatus for configuring reference signal channel characteristics, and communication device

Method and device for configuring reference signal

Method and device for reporting and receiving information, and computer readable storage medium

Processing method and apparatus for recovering beam

Signal transmission method and device, and computer storage medium

Wireless signal transmission method and device

Beam information feedback method and apparatus, and configuration information feedback method and apparatus

Configuration method and configuration device for reference signal and communication node

CHAN KEVIN K

Merged FinFETs and method of manufacturing the same

Thin-BOX metal backgate extremely thin SOI device

finFETs and methods of making same

Method of replacement source/drain for 3D CMOS transistors

FERRONE SOLDANO

Monoclonal antibodies for CSPG4 for the diagnosis and treatment of basal breast carcinoma

Methods for treating a tumor using an antibody that specifically binds GRP94

Antibodies to endoplasmin and their use

YIN HAIZHOU

Asymmetric epitaxy and application thereof

HEALTH RESEARCH INC

Peptides for stimulating an immune response against melanoma

MAJUMDAR AMLAN

Stressed source/drain CMOS and method for forming same

ECOPHYSICS AG

Apparatus for detecting CMP endpoint in acidic slurries

UNIV OF PITTSBURGH—OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

Monoclonal antibodies for CSPG4 for the diagnosis and treatment of basal breast carcinoma

UNIV NORTH CAROLINA CHAPEL HILL

Methods and compositions for chimeric antigen receptor targeting cancer cells

BEAUDOIN FELIX

Wrap-around fin for contacting a capacitor strap of a DRAM