Inventor
YANG MING-JEY
US4 patents
Patents
4 patentsUS6133593AOct 17, 2000
Channel design to reduce impact ionization in heterostructure field-effect transistors
US NAVY141 citations94
US6316124B1Nov 13, 2001
Modified InAs hall elements
US NAVY14 citations71
US6703639B1Mar 9, 2004
Nanofabrication for InAs/AlSb heterostructures
US NAVY8 citations69
US7157299B2Jan 2, 2007
Nanofabrication of InAs/A1Sb heterostructures
US NAVY4 citations58