P

Inventor

CHO JI HO

KR53 patents
⚠️ This page may combine multiple inventors who share the name “CHO JI HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

36 patents
US7236423B2Jun 26, 2007

Low power multi-chip semiconductor memory device and chip enable method thereof

SAMSUNG ELECTRONICS CO LTD16 citations91
US7495961B2Feb 24, 2009

Sense amplifiers including multiple precharge circuits and associated memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US7417895B2Aug 26, 2008

Nor flash memory and erase method thereof

SAMSUNG ELECTRONICS CO LTD12 citations84
US7864622B2Jan 4, 2011

Low power multi-chip semiconductor memory device and chip enable method thereof

SAMSUNG ELECTRONICS CO LTD9 citations82
US7512010B2Mar 31, 2009

Voltage regulator for flash memory device

SAMSUNG ELECTRONICS CO LTD11 citations82
US7417896B2Aug 26, 2008

Flash memory device capable of reduced programming time

SAMSUNG ELECTRONICS CO LTD7 citations74
US10825532B2Nov 3, 2020

Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations73
US10658043B2May 19, 2020

Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations73
US10510771B2Dec 17, 2019

Three-dimensional memory devices having plurality of vertical channel structures

SAMSUNG ELECTRONICS CO LTD3 citations73
US10424381B2Sep 24, 2019

Nonvolatile memory device and program method of the same

SAMSUNG ELECTRONICS CO LTD1 citations71
US7948801B2May 24, 2011

Nonvolatile memory device with expanded trimming operations

SAMSUNG ELECTRONICS CO LTD2 citations63
US7724582B2May 25, 2010

Decoders and decoding methods for nonvolatile memory devices using level shifting

SAMSUNG ELECTRONICS CO LTD2 citations63
US7684240B2Mar 23, 2010

Flash memory device having bit lines decoded in irregular sequence

SAMSUNG ELECTRONICS CO LTD4 citations63
US7616487B2Nov 10, 2009

Decoders and decoding methods for nonvolatile semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD3 citations63
US7551479B2Jun 23, 2009

Setting fail bit verification circuit with different reference fail numbers and a non-volatile semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7492642B2Feb 17, 2009

Flash memory device capable of reduced programming time

SAMSUNG ELECTRONICS CO LTD4 citations63
US7376044B2May 20, 2008

Burst read circuit in semiconductor memory device and burst data read method thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US7274598B2Sep 25, 2007

Nonvolatile integrated circuit memory devices having staged application of program voltages and methods for programming the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7245547B2Jul 17, 2007

Power detector for use in a nonvolatile memory device and method thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US6867628B2Mar 15, 2005

Semiconductor memory delay circuit

SAMSUNG ELECTRONICS CO LTD6 citations63
US11056194B2Jul 6, 2021

Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US10910077B2Feb 2, 2021

Operation method of a nonvolatile memory device for controlling a resume operation

SAMSUNG ELECTRONICS CO LTD0 citations62
US10431315B2Oct 1, 2019

Operation method of a nonvolatile memory device for controlling a resume operation

SAMSUNG ELECTRONICS CO LTD1 citations62
US7372738B2May 13, 2008

Flash memory device with reduced erase time

SAMSUNG ELECTRONICS CO LTD4 citations62
US12125538B2Oct 22, 2024

Nonvolatile memory device and program method of the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11355195B2Jun 7, 2022

Nonvolatile memory device and program method of the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US10971232B2Apr 6, 2021

Nonvolatile memory device and program method of the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US7489565B2Feb 10, 2009

Flash memory device including multi-buffer block

SAMSUNG ELECTRONICS CO LTD2 citations61
US7379380B2May 27, 2008

Low power multi-chip semiconductor memory device and chip enable method thereof

SAMSUNG ELECTRONICS CO LTD4 citations61
US10680013B2Jun 9, 2020

Three-dimensional memory devices having plurality of vertical channel structures

SAMSUNG ELECTRONICS CO LTD0 citations52
US8050094B2Nov 1, 2011

Memory cell array and non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7646663B2Jan 12, 2010

Semiconductor memory device and word line addressing method in which neighboring word lines are discontinuously addressed

SAMSUNG ELECTRONICS CO LTD0 citations52
US7602643B2Oct 13, 2009

Non-volatile memory devices capable of reading data during multi-sector erase operation, and data read methods thereof

SAMSUNG ELECTRONICS CO LTD1 citations52
US11322205B2May 3, 2022

Non-volatile memory device and method for programming the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US11200952B2Dec 14, 2021

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7808321B2Oct 5, 2010

Amplifier circuit

SAMSUNG ELECTRONICS CO LTD0 citations42

HYUNDAI MOTOR CO LTD

7 patents

LG DISPLAY CO LTD

2 patents

CHO JI-HO

2 patents

AIRY3D INC

2 patents

CHO JI HO

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.