Inventor
CHO JI HO
KR53 patents
⚠️ This page may combine multiple inventors who share the name “CHO JI HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
36 patentsUS7236423B2Jun 26, 2007
Low power multi-chip semiconductor memory device and chip enable method thereof
SAMSUNG ELECTRONICS CO LTD16 citations91
US7495961B2Feb 24, 2009
Sense amplifiers including multiple precharge circuits and associated memory devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US7417895B2Aug 26, 2008
Nor flash memory and erase method thereof
SAMSUNG ELECTRONICS CO LTD12 citations84
US7864622B2Jan 4, 2011
Low power multi-chip semiconductor memory device and chip enable method thereof
SAMSUNG ELECTRONICS CO LTD9 citations82
US7512010B2Mar 31, 2009
Voltage regulator for flash memory device
SAMSUNG ELECTRONICS CO LTD11 citations82
US7417896B2Aug 26, 2008
Flash memory device capable of reduced programming time
SAMSUNG ELECTRONICS CO LTD7 citations74
US10825532B2Nov 3, 2020
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10658043B2May 19, 2020
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10510771B2Dec 17, 2019
Three-dimensional memory devices having plurality of vertical channel structures
SAMSUNG ELECTRONICS CO LTD3 citations73
US10424381B2Sep 24, 2019
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD1 citations71
US7948801B2May 24, 2011
Nonvolatile memory device with expanded trimming operations
SAMSUNG ELECTRONICS CO LTD2 citations63
US7724582B2May 25, 2010
Decoders and decoding methods for nonvolatile memory devices using level shifting
SAMSUNG ELECTRONICS CO LTD2 citations63
US7684240B2Mar 23, 2010
Flash memory device having bit lines decoded in irregular sequence
SAMSUNG ELECTRONICS CO LTD4 citations63
US7616487B2Nov 10, 2009
Decoders and decoding methods for nonvolatile semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD3 citations63
US7551479B2Jun 23, 2009
Setting fail bit verification circuit with different reference fail numbers and a non-volatile semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7492642B2Feb 17, 2009
Flash memory device capable of reduced programming time
SAMSUNG ELECTRONICS CO LTD4 citations63
US7376044B2May 20, 2008
Burst read circuit in semiconductor memory device and burst data read method thereof
SAMSUNG ELECTRONICS CO LTD3 citations63
US7274598B2Sep 25, 2007
Nonvolatile integrated circuit memory devices having staged application of program voltages and methods for programming the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7245547B2Jul 17, 2007
Power detector for use in a nonvolatile memory device and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US6867628B2Mar 15, 2005
Semiconductor memory delay circuit
SAMSUNG ELECTRONICS CO LTD6 citations63
US11056194B2Jul 6, 2021
Method of erasing data in nonvolatile memory device, nonvolatile memory device performing the same and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10910077B2Feb 2, 2021
Operation method of a nonvolatile memory device for controlling a resume operation
SAMSUNG ELECTRONICS CO LTD0 citations62
US10431315B2Oct 1, 2019
Operation method of a nonvolatile memory device for controlling a resume operation
SAMSUNG ELECTRONICS CO LTD1 citations62
US7372738B2May 13, 2008
Flash memory device with reduced erase time
SAMSUNG ELECTRONICS CO LTD4 citations62
US12125538B2Oct 22, 2024
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11355195B2Jun 7, 2022
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10971232B2Apr 6, 2021
Nonvolatile memory device and program method of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US7489565B2Feb 10, 2009
Flash memory device including multi-buffer block
SAMSUNG ELECTRONICS CO LTD2 citations61
US7379380B2May 27, 2008
Low power multi-chip semiconductor memory device and chip enable method thereof
SAMSUNG ELECTRONICS CO LTD4 citations61
US10680013B2Jun 9, 2020
Three-dimensional memory devices having plurality of vertical channel structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US8050094B2Nov 1, 2011
Memory cell array and non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7646663B2Jan 12, 2010
Semiconductor memory device and word line addressing method in which neighboring word lines are discontinuously addressed
SAMSUNG ELECTRONICS CO LTD0 citations52
US7602643B2Oct 13, 2009
Non-volatile memory devices capable of reading data during multi-sector erase operation, and data read methods thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
US11322205B2May 3, 2022
Non-volatile memory device and method for programming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11200952B2Dec 14, 2021
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7808321B2Oct 5, 2010
Amplifier circuit
SAMSUNG ELECTRONICS CO LTD0 citations42
HYUNDAI MOTOR CO LTD
7 patentsUS9759675B2Sep 12, 2017
Particulate matter sensor unit
HYUNDAI MOTOR CO LTD3 citations70
US10087805B2Oct 2, 2018
Method of determining correcting logic for reacting model of selective catalytic reduction catalyst, method of correcting parameters of reacting model of selective catalytic reduction catalyst and exhaust system using the same
HYUNDAI MOTOR CO LTD2 citations69
US12115969B2Oct 15, 2024
Method for controlling powertrain of hybrid vehicle
HYUNDAI MOTOR CO LTD0 citations51
US9983600B2May 29, 2018
Method of correcting control logic of selective catalytic reduction catalyst and exhaust system using the same
HYUNDAI MOTOR CO LTD0 citations48
US9677443B2Jun 13, 2017
Method and system of determining suitability of correction for control logic of selective catalytic reduction catalyst
HYUNDAI MOTOR CO LTD1 citations48
US10139842B2Nov 27, 2018
Method of correcting control logic of selective catalytic reduction catalyst and exhaust system using the same
HYUNDAI MOTOR CO LTD0 citations44
US10094314B2Oct 9, 2018
Method of regenerating selective catalytic reduction catalyst on diesel particulate filter and exhaust purification system
HYUNDAI MOTOR CO LTD0 citations42
LG DISPLAY CO LTD
2 patentsCHO JI-HO
2 patentsAIRY3D INC
2 patentsCHO JI HO
1 patentShowing the top 50 of 53 patents by PatentIndex Score.