Inventor
CHEN CHIH-YEN
TW39 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHIH-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
24 patentsUS10964788B1Mar 30, 2021
Semiconductor device and operating method thereof
VANGUARD INT SEMICONDUCT CORP11 citations86
US10930745B1Feb 23, 2021
Semiconductor structure
VANGUARD INT SEMICONDUCT CORP11 citations86
US11201234B1Dec 14, 2021
High electron mobility transistor
VANGUARD INT SEMICONDUCT CORP10 citations85
US11152474B1Oct 19, 2021
Semiconductor device and method for forming the same
VANGUARD INT SEMICONDUCT CORP7 citations84
US10707322B2Jul 7, 2020
Semiconductor devices and methods for fabricating the same
VANGUARD INT SEMICONDUCT CORP2 citations73
US10644128B1May 5, 2020
Semiconductor devices with reduced channel resistance and methods for fabricating the same
VANGUARD INT SEMICONDUCT CORP5 citations73
US11398546B2Jul 26, 2022
Semiconductor devices and methods for fabricating the same
VANGUARD INT SEMICONDUCT CORP4 citations72
US11133246B1Sep 28, 2021
Semiconductor structure employing conductive paste on lead frame
VANGUARD INT SEMICONDUCT CORP3 citations72
US11335797B2May 17, 2022
Semiconductor devices and methods for fabricating the same
VANGUARD INT SEMICONDUCT CORP2 citations71
US11387356B2Jul 12, 2022
Semiconductor structure and high-electron mobility transistor device having the same
VANGUARD INT SEMICONDUCT CORP4 citations70
US11670505B2Jun 6, 2023
Semiconductor substrate, semiconductor device, and method for forming semiconductor structure
VANGUARD INT SEMICONDUCT CORP0 citations62
US11545567B2Jan 3, 2023
Methods for forming fluorine doped high electron mobility transistor (HEMT) devices
VANGUARD INT SEMICONDUCT CORP0 citations62
US11289407B2Mar 29, 2022
Package structure
VANGUARD INT SEMICONDUCT CORP0 citations62
US11251264B2Feb 15, 2022
Semiconductor device and manufacturing method of the same
VANGUARD INT SEMICONDUCT CORP0 citations62
US11127848B2Sep 21, 2021
Semiconductor structure and method for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations62
US10804385B2Oct 13, 2020
Semiconductor devices with fluorinated region and methods for forming the same
VANGUARD INT SEMICONDUCT CORP1 citations62
US11316040B2Apr 26, 2022
High electron mobility transistor
VANGUARD INT SEMICONDUCT CORP0 citations60
US11942519B2Mar 26, 2024
Semiconductor structure and high electron mobility transistor
VANGUARD INT SEMICONDUCT CORP0 citations59
US11967642B2Apr 23, 2024
Semiconductor structure, high electron mobility transistor and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations57
US12080764B2Sep 3, 2024
Semiconductor structure
VANGUARD INT SEMICONDUCT CORP0 citations53
US11670708B2Jun 6, 2023
Semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations52
US11127846B2Sep 21, 2021
High electron mobility transistor devices and methods for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations52
US10700189B1Jun 30, 2020
Semiconductor devices and methods for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations52
US12176430B2Dec 24, 2024
Semiconductor structure and semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations49
YANG CHIH-CHUNG
3 patentsUS8759814B2Jun 24, 2014
Semiconductor light-emitting device and manufacturing method thereof
YANG CHIH-CHUNG13 citations78
US9281184B2Mar 8, 2016
Fabrication method of nitride forming on silicon substrate
YANG CHIH-CHUNG0 citations51
US8153457B1Apr 10, 2012
Method for forming light emitting device
YANG CHIH-CHUNG0 citations50