Inventor

CHEN HOU-YU

TW109 patents

⚠️ This page may combine multiple inventors who share the name “CHEN HOU-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN HOU-YU

TAIWAN SEMICONDUCTOR MFG CO LTD

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Packaged semiconductor devices including backside power rails and methods of forming the same

Fin field effect transistor having a highly doped region

Backside interconnect structures for semiconductor devices and methods of forming the same

Tuning threshold voltage in nanosheet transitor devices

Semiconductor device and method

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Enhanced channel strain to reduce contact resistance in NMOS FET devices

FinFET and method of fabricating the same

Semiconductor device and manufacturing method thereof

Raised epitaxial LDD in MuGFETs and methods for forming the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

Semiconductor device and manufacturing method thereof

Method for forming semiconductor device

Stacked multi-gate structure and methods of fabricating the same

Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same

Replacement material for backside gate cut feature

Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same

Backside interconnect structures for semiconductor devices and methods of forming the same

Semiconductor device and manufacturing method thereof

Semiconductor device and method

Method for forming semiconductor device

Semiconductor device structure and methods of forming the same

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Source/drain contact structure

Semiconductor devices including decoupling capacitors

Semiconductor structure with isolating feature and method for forming the same

Semiconductor device structure and method for forming the same

Conductive rail structure for semiconductor devices

Leakage prevention structure and method

FinFETs having epitaxial capping layer on fin and methods for forming the same

Enhanced channel strain to reduce contact resistance in NMOS FET devices

Semiconductor device including fin structures and manufacturing method thereof

Multi-gate devices with replaced-channels and methods for forming the same

Semiconductor device and method of making

Packaged semiconductor devices including backside power rails and methods of forming the same

Vertically-oriented complementary transistor

Backside signal interconnection

Method and structure for FinFET devices

TAIWAN SEMICONDUCTOR MFG

High performance PD SOI tunneling-biased MOSFET

Method for fabricating a body contact in a Finfet structure and a device including the same

Semiconductor device and method of making

FinFET device including a stepped profile structure

Raised epitaxial LDD in MuGFETs

Method for fabricating a body contact in a finfet structure and a device including the same

Multi-gate device structure including a fin-embedded isolation region and methods thereof

Finfet and method of fabricating the same

KUO CHIH-WEI

Multi-gate devices with replaced-channels and methods for forming the same

CHAO DONALD Y

FinFET and method of fabricating the same